Silicon carbide power devices
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution.
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| Language: | English |
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Singapore
World Scientific Publishing Co. Pte. Ltd
2006
World Scientific Publishing World Scientific Publishing Company WORLD SCIENTIFIC |
| Edition: | 1 |
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| ISBN: | 9812566058, 9789812566058, 9789812774521, 9812774521, 9789813203235, 9813203234 |
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| Abstract | Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. |
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| AbstractList | Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.Sample Chapter(s)Chapter 1: Introduction (72 KB)Contents:Material Properties and TechnologyBreakdown VoltagePiN RectifiersSchottky RectifiersShielded Schottky RectifiersMetal-Semiconductor Field Effect TransistorsThe Baliga-Pair ConfigurationPlanar Power MOSFETsShielded Planar MOSFETsTrench-Gate Power MOSFETsShielded Trendch-Gate MOSFETsCharge Coupled StructuresIntegral DiodesLateral High Voltage FETsSynopsisReadership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices. |
| Author | Baliga, B Jayant |
| Author_xml | – sequence: 1 fullname: Brligr, B. Jayant – sequence: 2 fullname: Brligr, B. Jayant |
| BackLink | https://cir.nii.ac.jp/crid/1130282268792981760$$DView record in CiNii |
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| DOI | 10.1142/5986 |
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| EISBN | 9789812774521 9812774521 9789814478946 9814478946 |
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| ISBN | 9812566058 9789812566058 9789812774521 9812774521 9789813203235 9813203234 |
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| Keywords | Power Semiconductor Devices Wide Band Gap Semiconductors Power Rectifiers Schottky Diodes Silicon Carbide Field Effect Transistors Power Electronics |
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| PublicationDate | 2005. c2005 2006 20060100 2006-01-05 |
| PublicationDateYYYYMMDD | 2005-01-01 2006-01-01 2006-01-05 |
| PublicationDate_xml | – year: 2006 text: 2006 |
| PublicationDecade | 2000 |
| PublicationPlace | Singapore |
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| PublicationYear | 2005 2006 |
| Publisher | World Scientific Publishing Co. Pte. Ltd World Scientific Publishing World Scientific Publishing Company WORLD SCIENTIFIC |
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| Snippet | Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost... |
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| SubjectTerms | Electric properties Electrical & Electronic Engineering (Circuits & Systems, Communications, Control, Computer Engineering) Microelectronics SCIENCE Semiconductors Semiconductors & Related Areas Silicon carbide |
| SubjectTermsDisplay | Semiconductors Silicon carbide |
| TableOfContents | Silicon carbide power devices -- Dedication -- Preface -- Contents -- Chapter 1: Introduction -- Chapter 2: Material Properties and Technology -- Chapter 3: Breakdown Voltage -- Chapter 4: PiN Rectifiers -- Chapter 5: Schottky Rectifiers -- Chapter 6: Shielded Schottky Rectifiers -- Chapter 7: Metal-Semiconductor Field Effect Transistors -- Chapter 8: The Baliga-Pair Configuration -- Chapter 9: Planar Power MOSFETs -- Chapter 10: Shielded Planar MOSFETs -- Chapter 11: Trench-Gate Power MOSFETs -- Chapter 12: Shielded Trench-Gate Power MOSFETs -- Chapter 13: Charge Coupled Structures -- Chapter 14: Integral Diodes -- Chapter 15: Lateral High Voltage FETs -- Chapter 16: Synopsis -- Index -- Back Cover 8.2.2 Forward Conduction Mode -- 8.2.3 Current Saturation Mode -- 8.2.4 Switching Characteristics -- 8.2.5 Fly-Back Diode -- 8.3 Baliga-Pair Configuration: Experimental Results -- 8.4 Summary -- References -- Chapter 9 Planar Power MOSFETs -- 9.1 Planar Power MOSFET Structure -- 9.1.1 Blocking Characteristics -- 9.1.2 Forward Conduction -- 9.1.3 Threshold Voltage -- 9.1.4 Threshold Voltage Simulations -- 9.1.5 Hot Electron Injection -- 9.2 Planar Power MOSFET Structure: Numerical Simulations -- 9.2.1 Blocking Characteristics -- 9.2.2 On-State Characteristics -- 9.2.3 Output Characteristics -- 9.3 Planar Power MOSFET: Experimental Results -- 9.3.1 Silicon Carbide MOSFET: Inversion Layer Mobility -- 9.3.2 The 4H-SiC Planar MOSFET: Experimental Results -- 9.4 Summary -- References -- Chapter 10 Shielded Planar MOSFETs -- 10.1 Shielded Planar MOSFET Structure -- 10.1.1 Blocking Mode -- 10.1.2 Forward Conduction -- 10.1.3 Threshold Voltage -- 10.1.4 ACCUFET Structure: Threshold Voltage Simulations -- 10.2 Planar Shielded Inversion-Mode MOSFET: Simulations -- 10.2.1 Blocking Characteristics -- 10.2.2 On-State Characteristics -- 10.2.3 Output Characteristics -- 10.3 Planar Shielded ACCUFET Structure: Simulations -- 10.3.1 Blocking Characteristics -- 10.3.2 On-State Characteristics -- 10.3.3 Output Characteristics -- 10.4 Planar Shielded MOSFET Structures: Experimental Results -- 10.4.1 Silicon Carbide MOSFET: Accumulation Layer Mobility -- 10.4.2 The Planar 4H-SiC Inversion-Mode MOSFET: Experimental Results -- 10.4.3 The 4H-SiC Accumulation-Mode Planar MOSFET Structure: Experimental Results -- 10.5 Summary -- References -- Chapter 11 Trench-Gate Power MOSFETs -- 11.1 Trench-Gate Power MOSFET Structure -- 11.1.1 Blocking Characteristics -- 11.1.2 Forward Conduction -- 11.1.3 Threshold Voltage -- 11.2 Trench-Gate Power MOSFET Structure: Numerical Simulations Intro -- Contents -- Preface -- Chapter 1 Introduction -- 1.1 Ideal and Typical Power Device Characteristics -- 1.2 Unipolar Power Devices -- 1.3 Bipolar Power Devices -- 1.4 MOS-Bipolar Power Devices -- 1.5 Ideal Drift Region for Unipolar Power Devices -- 1.6 Summary -- References -- Chapter 2 Material Properties and Technology -- 2.1 Fundamental Properties -- 2.1.1 Energy Band Gap -- 2.1.2 Impact Ionization Coefficients -- 2.1.3 Electron Mobility -- 2.2 Other Properties Relevant to Power Devices -- 2.2.1 Donor and Acceptor Ionization Energy Levels -- 2.2.2 Recombination Lifetimes -- 2.2.3 Metal-Semiconductor Contacts -- 2.3 Fabrication Technology -- 2.3.1 Diffusion Coefficients and Solubility of Dopants -- 2.3.2 Ion Implantation and Annealing -- 2.3.3 Gate Oxide Formation -- 2.3.4 Reactive Ion Etching of Trenches -- 2.4 Summary -- References -- Chapter 3 Breakdown Voltage -- 3.1 One-Dimensional Abrupt Junction -- 3.2 Schottky Diode Edge Termination -- 3.2.1 Planar Schottky Diode Edge Termination -- 3.2.2 Planar Schottky Diode with Field Plate Edge Temination -- 3.2.3 Schottky Diode with Floating Metal Rings -- 3.2.4 Schottky Diode Edge Termination with Argon Implant -- 3.2.5 Schottky Diode Edge Termination with RESP Region -- 3.3 P-N Junction Edge Termination -- 3.3.1 Planar Junction Edge Termination -- 3.3.2 Planar Junction Edge Termination with Field Plate -- 3.3.3 Planar Junction Edge Termination with Floating Rings -- 3.3.4 Planar Junction Edge Termination with P-Extension -- 3.4 Summary -- References -- Chapter 4 PiN Rectifiers -- 4.1 One-Dimensional PiN Structure -- 4.2 Experimental Results -- 4.3 Summary -- References -- Chapter 5 Schottky Rectifiers -- 5.1 Schottky Rectifier Structure: Forward Conduction -- 5.1.1 Forward Conduction: Simulation Results -- 5.1.2 Forward Conduction: Experimental Results 5.2 Schottky Rectifier Structure: Reverse Blocking -- 5.3 Schottky Rectifier Structure: Impact of Defects -- 5.4 Reliability Issues -- 5.5 Summary -- References -- Chapter 6 Shielded Schottky Rectifiers -- 6.1 Junction Barrier Schottky (JBS) Rectifier Structure -- 6.1.1 JBS Rectifier Structure: Forward Conduction Model -- 6.1.2 JBS Rectifier Structure: Reverse Leakage Model -- 6.1.3 JBS Rectifier Structure: Simulation Results -- 6.1.4 JBS Rectifier Structure: Experimental Results -- 6.2 Trench MOS Barrier Schottky (TMBS) Rectifier Structure -- 6.2.1 TMBS Rectifier Structure: Simulation Results -- 6.3 Trench Schottky Barrier Schottky (TSBS) Rectifier Structure -- 6.3.1 TSBS Rectifier Structure: Simulation Results -- 6.3.2 TSBS Rectifiers: Experimental Results -- 6.4 Summary -- References -- Chapter 7 Metal-Semiconductor Field Effect Transistors -- 7.1 Trench Junction (Metal-Semiconductor) FET Structure -- 7.1.1 Forward Blocking -- 7.1.2 On-State -- 7.2 Trench MESFET Structure: Simulation Results -- 7.2.1 On-State Characteristics -- 7.2.2 Blocking Characteristics -- 7.2.3 Output Characteristics -- 7.3 JFET Structure: Simulation Results -- 7.4 Planar MESFET Structure -- 7.4.1 Forward Blocking -- 7.4.2 On-State Resistance -- 7.5 Planar MESFET Structure: Numerical Simulations -- 7.5.1 On-State Characteristics -- 7.5.2 Blocking Characteristics -- 7.5.3 Output Characteristics -- 7.5.4 Gate Contact Shielding -- 7.6 Experimental Results: Trench Gate Structures -- 7.7 Experimental Results: Planar Gate Structures -- 7.8 Summary -- References -- Chapter 8 The Baliga-Pair Configuration -- 8.1 The Baliga-Pair Configuration -- 8.1.1 Voltage Blocking Mode -- 8.1.2 Forward Conduction Mode -- 8.1.3 Current Saturation Mode -- 8.1.4 Switching Characteristics -- 8.1.5 Fly-Back Diode -- 8.2 Baliga-Pair: Simulation Results -- 8.2.1 Voltage Blocking Mode 11.2.1 Blocking Characteristics -- 11.2.2 On-State Characteristics -- 11.2.3 Output Characteristics -- 11.3 Accumulation-Mode Trench-Gate Power MOSFET -- 11.4 Trench-Gate Power MOSFET: High Permittivity Gate Insulator -- 11.5 Trench-Gate Power MOSFET: Experimental Results -- 11.6 Summary -- References -- Chapter 12 Shielded Trench-Gate Power MOSFETs -- 12.1 Shielded Trench-Gate Power MOSFET Structure -- 12.1.1 Blocking Characteristics -- 12.1.2 Forward Conduction -- 12.1.3 Threshold Voltage -- 12.2 Shielded Trench-Gate Power MOSFET: Structure: Numerical Simulations -- 12.2.1 Blocking Characteristics -- 12.2.2 On-State Characteristics -- 12.2.3 Output Characteristics -- 12.3 Shielded Trench-Gate MOSFET: Experimental Results -- 12.4 Summary -- References -- Chapter 13 Charge Coupled Structures -- 13.1 Charge Coupled Silicon Carbide Structures -- 13.2 Charge Coupled Silicon Carbide Structure:Ideal Specific On-Resistance -- 13.3 Charge Coupled Schottky Rectifier Structure -- 13.3.1 Blocking Characteristics -- 13.3.2 0n-State Characteristics -- 13.4 Enhanced Charge Coupled Schottky Rectifier Structure -- 13.4.1 Blocking Characteristics -- 13.4.2 0n-State Characteristics -- 13.4.3 Charge Optimization -- 13.4.4 Charge Imbalance -- 13.5 Charge Coupled JFET Structure -- 13.5.1 Blocking Characteristics -- 13.5.2 0n-State Characteristics -- 13.5.3 Output Characteristics -- 13.6 Shielded Charge Coupled MOSFET Structure -- 13.6.1 Blocking Characteristics -- 13.6.2 On-State Characteristics -- 13.6.3 Output Characteristics -- 13.6.4 Switching Characteristics -- 13.7 Summary -- References -- Chapter 14 Integral Diodes -- 14.1 Trench-Gate MOSFET Structure -- 14.2 Shielded Trench-Gate MOSFET Structure -- 14.3 Planar Shielded ACCUFET Structure -- 14.4 Charge Coupled MOSFET Structure -- 14.5 Summary -- References -- Chapter 15 Lateral High Voltage FETs 15.1 Fundamental Analysis -- 15.2 Lateral High Voltage Buried Junction FET Structure -- 15.3 Lateral High Voltage MESFET Structure -- 15.4 Lateral High Voltage MOSFET Structure -- 15.5 Lateral MOSFET Structure with Field Plates -- 15.6 Lateral High Voltage Shielded MOSFET Structure -- 15.7 Lateral High Voltage MOSFET Structure Optimization -- 15.8 Lateral HV-MOSFET Structure: Experimental Results -- 15.9 Summary -- References -- Chapter 16 Synopsis -- 16.1 Typical Motor Control Application -- 16.2 Motor Control Application: Silicon IGBT and P-i-N Rectifier -- 16.3 Motor Control Application: Silicon IGBT and SiC Schottky Rectifier -- 16.4 Motor Control Application: SiC MOSFET and Rectifier -- 16.5 Motor Control Application: Comparison of Cases -- 16.6 Summary -- References -- Index |
| Title | Silicon carbide power devices |
| URI | http://portal.igpublish.com/iglibrary/search/WSPCB0001136.html https://cir.nii.ac.jp/crid/1130282268792981760 https://www.perlego.com/book/847341/silicon-carbide-power-devices-pdf https://ebookcentral.proquest.com/lib/[SITE_ID]/detail.action?docID=1681716 https://www.worldscientific.com/doi/10.1142/5986 https://www.vlebooks.com/vleweb/product/openreader?id=none&isbn=9789812774521&uid=none |
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