An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular m...

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Veröffentlicht in:arXiv.org
Hauptverfasser: Ross, Andrew, Lebrun, Romain, Baldrati, Lorenzo, Kamra, Akashdeep, Gomonay, Olena, Ding, Shilei, Schreiber, Felix, Backes, Dirk, Maccherozzi, Francesco, Grave, Daniel A, Rothschild, Avner, Sinova, Jairo, Kläui, Mathias
Format: Paper
Sprache:Englisch
Veröffentlicht: Ithaca Cornell University Library, arXiv.org 19.11.2020
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ISSN:2331-8422
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Zusammenfassung:We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 {\mu}m, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport length scale showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the non-local signal independent of the magnetic state visible in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied-field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.
Bibliographie:SourceType-Working Papers-1
ObjectType-Working Paper/Pre-Print-1
content type line 50
ISSN:2331-8422
DOI:10.48550/arxiv.2011.09755