Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-type Semiconductor
Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSC) lags behind their p-type counterparts. The trapp...
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| Vydané v: | ACS applied materials & interfaces Ročník 10; číslo 18; s. 15952 |
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| Hlavní autori: | , , , |
| Médium: | Journal Article |
| Jazyk: | English |
| Vydavateľské údaje: |
United States
09.05.2018
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| ISSN: | 1944-8252, 1944-8252 |
| On-line prístup: | Zistit podrobnosti o prístupe |
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| Shrnutí: | Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSC) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein we report printed small molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast oxidation of the OSC. Additionally, a CMOS-like inverter is fabricated depositing a p-type and n-type OSCs simultaneously. |
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| Bibliografia: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 1944-8252 1944-8252 |
| DOI: | 10.1021/acsami.8b02851 |