APA (7th ed.) Citation

Campos, A., Riera-Galindo, S., Puigdollers, J., & Mas-Torrent, M. (2018). Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-type Semiconductor. ACS applied materials & interfaces, 10(18), 15952. https://doi.org/10.1021/acsami.8b02851

Chicago Style (17th ed.) Citation

Campos, Antonio, Sergi Riera-Galindo, Joaquim Puigdollers, and Marta Mas-Torrent. "Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended N-type Semiconductor." ACS Applied Materials & Interfaces 10, no. 18 (2018): 15952. https://doi.org/10.1021/acsami.8b02851.

MLA (9th ed.) Citation

Campos, Antonio, et al. "Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended N-type Semiconductor." ACS Applied Materials & Interfaces, vol. 10, no. 18, 2018, p. 15952, https://doi.org/10.1021/acsami.8b02851.