Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide

Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron–hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton–exciton annihilation, a four-body interaction, in this material. Exciton–exciton ann...

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Vydáno v:Nano letters Ročník 14; číslo 10; s. 5625 - 5629
Hlavní autoři: Sun, Dezheng, Rao, Yi, Reider, Georg A, Chen, Gugang, You, Yumeng, Brézin, Louis, Harutyunyan, Avetik R, Heinz, Tony F
Médium: Journal Article
Jazyk:angličtina
Vydáno: Washington, DC American Chemical Society 08.10.2014
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ISSN:1530-6984, 1530-6992, 1530-6992
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Shrnutí:Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron–hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton–exciton annihilation, a four-body interaction, in this material. Exciton–exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton–exciton annihilation was determined to be (4.3 ± 1.1) × 10–2 cm2/s at room temperature.
Bibliografie:ObjectType-Article-1
SourceType-Scholarly Journals-1
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USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
SC0001085
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/nl5021975