Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide

Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron–hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton–exciton annihilation, a four-body interaction, in this material. Exciton–exciton ann...

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Vydané v:	Nano letters Ročník 14; číslo 10; s. 5625 - 5629
Hlavní autori:	Sun, Dezheng, Rao, Yi, Reider, Georg A, Chen, Gugang, You, Yumeng, Brézin, Louis, Harutyunyan, Avetik R, Heinz, Tony F
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Washington, DC American Chemical Society 08.10.2014
Predmet:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Density Electron states Electron-hole interaction Exact sciences and technology Excitation Excitons Excitons and related phenomena Molybdenum disulfide Monolayers Physics Semiconductors Trions MoS2 transient absorption spectroscopy exciton dynamics exciton−exciton annihilation Excitons Semiconductor materials Strong interactions Monolayers Electron interaction Molybdenum Trion
ISSN:	1530-6984, 1530-6992, 1530-6992
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Abstract	Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron–hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton–exciton annihilation, a four-body interaction, in this material. Exciton–exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton–exciton annihilation was determined to be (4.3 ± 1.1) × 10–2 cm2/s at room temperature.
AbstractList	Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton-exciton annihilation, a four-body interaction, in this material. Exciton-exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton-exciton annihilation was determined to be (4.3 ± 1.1) × 10(-2) cm(2)/s at room temperature. Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton-exciton annihilation, a four-body interaction, in this material. Exciton-exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton-exciton annihilation was determined to be (4.3 ± 1.1) × 10(-2) cm(2)/s at room temperature.Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton-exciton annihilation, a four-body interaction, in this material. Exciton-exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton-exciton annihilation was determined to be (4.3 ± 1.1) × 10(-2) cm(2)/s at room temperature. Monolayer MoS sub(2) is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton-exciton annihilation, a four-body interaction, in this material. Exciton-exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton-exciton annihilation was determined to be (4.3 plus or minus 1.1) 10 super(-2) cm super(2)/s at room temperature. Keywords: MoS sub(2); transient absorption spectroscopy; exciton dynamics; exciton-exciton annihilation Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron–hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton–exciton annihilation, a four-body interaction, in this material. Exciton–exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton–exciton annihilation was determined to be (4.3 ± 1.1) × 10–2 cm2/s at room temperature.
Author	Sun, Dezheng Rao, Yi Harutyunyan, Avetik R Heinz, Tony F Brézin, Louis Reider, Georg A Chen, Gugang You, Yumeng
AuthorAffiliation	Department of Chemistry Columbia University Laboratoire d’Optique Appliquée, ENSTA, CNRS Departments of Physics and Electrical Engineering TU Wien Temple University Honda Research Institute USA, Inc Ecole Polytechnique Photonics Institute
AuthorAffiliation_xml	– name: Departments of Physics and Electrical Engineering – name: Department of Chemistry – name: Honda Research Institute USA, Inc – name: Columbia University – name: Laboratoire d’Optique Appliquée, ENSTA, CNRS – name: TU Wien – name: Ecole Polytechnique – name: Photonics Institute – name: Temple University
Author_xml	– sequence: 1 givenname: Dezheng surname: Sun fullname: Sun, Dezheng – sequence: 2 givenname: Yi surname: Rao fullname: Rao, Yi – sequence: 3 givenname: Georg A surname: Reider fullname: Reider, Georg A – sequence: 4 givenname: Gugang surname: Chen fullname: Chen, Gugang – sequence: 5 givenname: Yumeng surname: You fullname: You, Yumeng – sequence: 6 givenname: Louis surname: Brézin fullname: Brézin, Louis – sequence: 7 givenname: Avetik R surname: Harutyunyan fullname: Harutyunyan, Avetik R – sequence: 8 givenname: Tony F surname: Heinz fullname: Heinz, Tony F email: tony.heinz@columbia.edu
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Keywords	MoS2 transient absorption spectroscopy exciton dynamics exciton−exciton annihilation Excitons Semiconductor materials Strong interactions Monolayers Electron interaction Molybdenum Trion
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Snippet	Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron–hole interactions, leading to the formation of stable excitons and... Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons and... Monolayer MoS sub(2) is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons...
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SubjectTerms	Condensed matter: electronic structure, electrical, magnetic, and optical properties Density Electron states Electron-hole interaction Exact sciences and technology Excitation Excitons Excitons and related phenomena Molybdenum disulfide Monolayers Physics Semiconductors Trions
Title	Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide
URI	http://dx.doi.org/10.1021/nl5021975 https://www.ncbi.nlm.nih.gov/pubmed/25171389 https://www.proquest.com/docview/1609507858 https://www.proquest.com/docview/1762052113 https://www.osti.gov/biblio/1370382
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