Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use o...

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Vydáno v:	ACS nano Ročník 14; číslo 6; s. 6570 - 6581
Hlavní autoři:	Li, Xufan, Kahn, Ethan, Chen, Gugang, Sang, Xiahan, Lei, Jincheng, Passarello, Donata, Oyedele, Akinola D, Zakhidov, Dante, Chen, Kai-Wen, Chen, Yu-Xun, Hsieh, Shang-Hsien, Fujisawa, Kazunori, Unocic, Raymond R, Xiao, Kai, Salleo, Alberto, Toney, Michael F, Chen, Chia-Hao, Kaxiras, Efthimios, Terrones, Mauricio, Yakobson, Boris I, Harutyunyan, Avetik R
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	United States American Chemical Society 23.06.2020 American Chemical Society (ACS)
Témata:	edge passivation INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY lithography-free patterning MoS2 strain surfactant strain lithography-free patterning MoS2 edge passivation surfactant
ISSN:	1936-0851, 1936-086X, 1936-086X
On-line přístup:	Získat plný text
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Shrnutí:	The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.
Bibliografie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 USDOE Office of Science (SC), Basic Energy Sciences (BES) AC02-76SF00515; W911NF-14-0247; DGE1656518; DMR- 1231319; AC05-00OR22725 National Science Foundation Graduate Research Fellowship
ISSN:	1936-0851 1936-086X 1936-086X
DOI:	10.1021/acsnano.0c00132