Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this uniq...

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Vydáno v:	Nano letters Ročník 14; číslo 5; s. 2884 - 2889
Hlavní autoři:	Fei, Ruixiang, Yang, Li
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Washington, DC American Chemical Society 14.05.2014
Témata:	Anisotropy Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductance Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Energy gaps (solid state) Exact sciences and technology Mathematical analysis Phosphorus Physics Quantum Hall effect Strain strain anisotropic conductance Black phosphorus effective mass phosphorene Free carrier Energy gap Electronic properties Anisotropy Digital simulation Monolayers Electrical conductance Uniaxial strain Phosphorus Quantum Hall effect Carrier mobility
ISSN:	1530-6984, 1530-6992, 1530-6992
On-line přístup:	Získat plný text
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