Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this uniq...

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Vydané v:Nano letters Ročník 14; číslo 5; s. 2884 - 2889
Hlavní autori: Fei, Ruixiang, Yang, Li
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Washington, DC American Chemical Society 14.05.2014
Predmet:
Anisotropy
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductance
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Energy gaps (solid state)
Exact sciences and technology
Mathematical analysis
Phosphorus
Physics
Quantum Hall effect
Strain
strain
anisotropic conductance
Black phosphorus
effective mass
phosphorene
Free carrier
Energy gap
Electronic properties
Anisotropy
Digital simulation
Monolayers
Electrical conductance
Uniaxial strain
Phosphorus
Quantum Hall effect
Carrier mobility
ISSN:1530-6984, 1530-6992, 1530-6992
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Popis
Shrnutí:Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4–6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.
Bibliografia:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/nl500935z