A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically...

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Bibliographic Details
Published in:Nano letters Vol. 12; no. 1; pp. 389 - 395
Main Authors: Kim, Kuk-Hwan, Gaba, Siddharth, Wheeler, Dana, Cruz-Albrecht, Jose M, Hussain, Tahir, Srinivasa, Narayan, Lu, Wei
Format: Journal Article
Language:English
Published: Washington, DC American Chemical Society 11.01.2012
Subjects:
Applied sciences
Arrays
Binary systems (materials)
CMOS
Computer Storage Devices
Data storage
Electric Impedance
Electronics
Equipment Design
Equipment Failure Analysis
Exact sciences and technology
Information Storage and Retrieval
Memory devices
Molecular electronics, nanoelectronics
Multilevel
Nanostructures - chemistry
Nanostructures - ultrastructure
Nanotechnology - instrumentation
Particle Size
Programming
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Stores
Systems Integration
hybrid integration
Memristor
resistive memory (RRAM)
crossbar
neuromorphic system
multilevel
Array
Diode
High density
Memory
Data storage
Transistor
Chip
ISSN:1530-6984, 1530-6992, 1530-6992
Online Access:Get full text
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Summary:Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
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ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/nl203687n