Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures
Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when T...
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| Vydáno v: | ACS applied materials & interfaces |
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| Hlavní autoři: | , , , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
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15.07.2022
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| ISSN: | 1944-8252, 1944-8252 |
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| Abstract | Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties. |
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| AbstractList | Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties. |
| Author | Baldoví, José J Mañas-Valero, Samuel Gadea, Marcos Esteras, Dorye L Calvo, M Reyes Canet-Ferrer, Josep Coronado, Eugenio Marques-Moros, Francisco Ramos, Maria Henríquez-Guerra, Eudomar |
| Author_xml | – sequence: 1 givenname: Maria surname: Ramos fullname: Ramos, Maria – sequence: 2 givenname: Francisco surname: Marques-Moros fullname: Marques-Moros, Francisco – sequence: 3 givenname: Dorye L surname: Esteras fullname: Esteras, Dorye L – sequence: 4 givenname: Samuel surname: Mañas-Valero fullname: Mañas-Valero, Samuel – sequence: 5 givenname: Eudomar surname: Henríquez-Guerra fullname: Henríquez-Guerra, Eudomar – sequence: 6 givenname: Marcos surname: Gadea fullname: Gadea, Marcos – sequence: 7 givenname: José J surname: Baldoví fullname: Baldoví, José J – sequence: 8 givenname: Josep surname: Canet-Ferrer fullname: Canet-Ferrer, Josep – sequence: 9 givenname: Eugenio surname: Coronado fullname: Coronado, Eugenio – sequence: 10 givenname: M Reyes surname: Calvo fullname: Calvo, M Reyes |
| BookMark | eNpNj01LAzEURYNUsK1uXWfpZtokk2SSZS39ECoWqrgsr5nXdmQm0UlG8N87qAtX53K4XLgjMvDBIyG3nE04E3wKLkJTTYRjSmp5QYbcSpkZocTgX74ioxjfGNO5YGpIzttzSKHumspjdOgd0oU_Q88GfaKHL3oPvqSzujr5H7Pwp76KbeVPtPL0MezEdInbXU4_wdMSW_oKUEe6xoRtiKntXOpajNfk8th7vPnjmLwsF8_zdbZ5Wj3MZ5sMZK5ShgytRqmtQg0CCpUzfSyOudPaSqMQjACWG6uMwZJDYbiQTljlJOemOJRiTO5-d9_b8NFhTPum6o_VNXgMXdwLbTmTWkklvgFRjV0- |
| CitedBy_id | crossref_primary_10_1038_s41598_025_96930_7 crossref_primary_10_1002_adfm_202401896 crossref_primary_10_1021_acsami_4c22204 crossref_primary_10_1063_5_0114685 crossref_primary_10_1039_D4NR04009K crossref_primary_10_1063_5_0222472 crossref_primary_10_1002_smll_202404346 crossref_primary_10_1002_smll_202401474 crossref_primary_10_1002_aelm_202400435 crossref_primary_10_1103_PhysRevB_111_L140407 crossref_primary_10_1002_adom_202403492 crossref_primary_10_1088_2053_1583_add7ea crossref_primary_10_1016_j_cplett_2023_140639 crossref_primary_10_1007_s40042_025_01444_0 crossref_primary_10_1002_adfm_202300686 crossref_primary_10_1021_acsaom_5c00105 crossref_primary_10_1039_D4TC05376A crossref_primary_10_1038_s41699_025_00578_w crossref_primary_10_26599_NR_2025_94907111 crossref_primary_10_1021_acsphotonics_5c00144 crossref_primary_10_1038_s41699_025_00541_9 crossref_primary_10_1016_j_newton_2025_100019 crossref_primary_10_1063_5_0276993 crossref_primary_10_12677_jsta_2024_124059 crossref_primary_10_1016_j_mtelec_2023_100061 |
| ContentType | Journal Article |
| DBID | 7X8 |
| DOI | 10.1021/acsami.2c05464 |
| DatabaseName | MEDLINE - Academic |
| DatabaseTitle | MEDLINE - Academic |
| DatabaseTitleList | MEDLINE - Academic |
| Database_xml | – sequence: 1 dbid: 7X8 name: MEDLINE - Academic url: https://search.proquest.com/medline sourceTypes: Aggregation Database |
| DeliveryMethod | no_fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1944-8252 |
| GroupedDBID | --- .K2 23M 4.4 53G 55A 5GY 5VS 5ZA 6J9 7X8 7~N AABXI AAHBH ABBLG ABJNI ABLBI ABMVS ABQRX ABUCX ACGFS ACS ADHLV AEESW AENEX AFEFF AHGAQ ALMA_UNASSIGNED_HOLDINGS AQSVZ BAANH CUPRZ EBS ED~ F5P GGK GNL IH9 JG~ P2P RNS ROL UI2 VF5 VG9 W1F XKZ |
| ID | FETCH-LOGICAL-a435t-e0e96e4695e6a2a75306f7f3c669485ea82a0389588ed1a78124c295c41187bd2 |
| IEDL.DBID | 7X8 |
| ISICitedReferencesCount | 33 |
| ISICitedReferencesURI | http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000830812500001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| ISSN | 1944-8252 |
| IngestDate | Fri Jul 11 11:36:48 EDT 2025 |
| IsDoiOpenAccess | false |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-a435t-e0e96e4695e6a2a75306f7f3c669485ea82a0389588ed1a78124c295c41187bd2 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| OpenAccessLink | https://pubmed.ncbi.nlm.nih.gov/PMC9335528 |
| PQID | 2691046545 |
| PQPubID | 23479 |
| ParticipantIDs | proquest_miscellaneous_2691046545 |
| PublicationCentury | 2000 |
| PublicationDate | 2022-07-15 |
| PublicationDateYYYYMMDD | 2022-07-15 |
| PublicationDate_xml | – month: 07 year: 2022 text: 2022-07-15 day: 15 |
| PublicationDecade | 2020 |
| PublicationTitle | ACS applied materials & interfaces |
| PublicationYear | 2022 |
| SSID | ssj0063205 |
| Score | 2.5416584 |
| Snippet | Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled... |
| SourceID | proquest |
| SourceType | Aggregation Database |
| Title | Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures |
| URI | https://www.proquest.com/docview/2691046545 |
| WOSCitedRecordID | wos000830812500001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| hasFullText | |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LSwMxEA5qPejBt_gmgtfQNskmuyep0tKDlkJ99FbS7KwtyK52W8F_78x2q8WT4H0Du8m3M9888g1jV4QRG_u6gGEMQifSiFBrJ5RHbmDQoelCp_vpznY6Yb8fdcuEW162VS5sYmGo48xTjrwqTUTlSHT412_vgqZGUXW1HKGxyioKqQyh2va_qwhGyaKFEeN0LTASkgvRRlmvOp_TgB3pkbKQ2sAvQ1x4l9b2f99rh22VvJI35kDYZSuQ7rHNJbXBfTbqjrIpGSPqdPf0R_NmOqJTpwwhH37yG5fGvPE6filaBPjSaj5O-X3Wk9UWdHuKI_3mMUz4s0P08ja11GRzJdoZhu8H7LHVfLhti3LQgnDIlqYCahAZwEA5AOOkwwimZhKbKG8MiceAC6UjIb4gDCGuO0ukwMso8JqGlQ9jecjW0iyFI8adN9IjR7LKgo6UcaC1qvnYJs4qlcAxu1xs4wCBTNUJl0I2ywc_G3nyh2dO2YakiwgkcRmcsUqCnwvnbN1_TMf55KLAwRddmrz2 |
| linkProvider | ProQuest |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Photoluminescence+Enhancement+by+Band+Alignment+Engineering+in+MoS2%2FFePS3+van+der+Waals+Heterostructures&rft.jtitle=ACS+applied+materials+%26+interfaces&rft.au=Ramos%2C+Maria&rft.au=Marques-Moros%2C+Francisco&rft.au=Esteras%2C+Dorye+L&rft.au=Ma%C3%B1as-Valero%2C+Samuel&rft.date=2022-07-15&rft.issn=1944-8252&rft.eissn=1944-8252&rft_id=info:doi/10.1021%2Facsami.2c05464&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1944-8252&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1944-8252&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1944-8252&client=summon |