Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted models explain the resistive switching in these devices through the presence/absence of a conductive filament (CF) that is described as a revers...

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Veröffentlicht in:	Nano letters Jg. 15; H. 12; S. 7970 - 7975
Hauptverfasser:	Celano, Umberto, Goux, Ludovic, Degraeve, Robin, Fantini, Andrea, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	United States American Chemical Society 09.12.2015
Schlagworte:	scalpel SPM resistive random access memory (RRAM) resistive switching Conductive filament C-AFM tomography
ISSN:	1530-6984, 1530-6992
Online-Zugang:	Volltext
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