Structure and Growth of Hexagonal Boron Nitride on Ir(111)

Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly...

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Vydáno v:ACS nano Ročník 10; číslo 12; s. 11012 - 11026
Hlavní autoři: Farwick zum Hagen, Ferdinand H, Zimmermann, Domenik M, Silva, Caio C, Schlueter, Christoph, Atodiresei, Nicolae, Jolie, Wouter, Martínez-Galera, Antonio J, Dombrowski, Daniela, Schröder, Ulrike A, Will, Moritz, Lazić, Predrag, Caciuc, Vasile, Blügel, Stefan, Lee, Tien-Lin, Michely, Thomas, Busse, Carsten
Médium: Journal Article
Jazyk:angličtina
Vydáno: United States American Chemical Society 27.12.2016
Témata:
epitaxial growth
X-ray standing waves
hexagonal boron nitride
Ir
moiré
scanning tunneling microscopy
graphene
moiré
ISSN:1936-0851, 1936-086X
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Abstract Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.
AbstractList Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.
Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.
Author Caciuc, Vasile
Schröder, Ulrike A
Busse, Carsten
Schlueter, Christoph
Lazić, Predrag
Silva, Caio C
Atodiresei, Nicolae
Lee, Tien-Lin
Michely, Thomas
Farwick zum Hagen, Ferdinand H
Martínez-Galera, Antonio J
Dombrowski, Daniela
Blügel, Stefan
Zimmermann, Domenik M
Will, Moritz
Jolie, Wouter
AuthorAffiliation Institut für Materialphysik
Westfälische Wilhelms-Universität Münster
Universität zu Köln
Peter Grünberg Institut (PGI) and Institute for Advanced Simulation (IAS)
Institut Ruđer Bošković
Diamond Light Source
II. Physikalisches Institut
AuthorAffiliation_xml – name: Universität zu Köln
– name: Institut Ruđer Bošković
– name: Westfälische Wilhelms-Universität Münster
– name: II. Physikalisches Institut
– name: Institut für Materialphysik
– name: Peter Grünberg Institut (PGI) and Institute for Advanced Simulation (IAS)
– name: Diamond Light Source
Author_xml – sequence: 1
  givenname: Ferdinand H
  surname: Farwick zum Hagen
  fullname: Farwick zum Hagen, Ferdinand H
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  surname: Zimmermann
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  surname: Busse
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  email: carsten.busse@uni-muenster.de
BackLink https://www.ncbi.nlm.nih.gov/pubmed/28024332$$D View this record in MEDLINE/PubMed
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Keywords epitaxial growth
X-ray standing waves
hexagonal boron nitride
Ir
moiré
scanning tunneling microscopy
graphene
moiré
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Snippet Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the...
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Title Structure and Growth of Hexagonal Boron Nitride on Ir(111)
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