Inversion for Thermal Properties with Frequency Domain Thermoreflectance

3D integration of multiple microelectronic devices improves size, weight, and power while increasing the number of interconnections between components. One integration method involves the use of metal bump bonds to connect devices and components on a common interposer platform. Significant variation...

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Bibliographische Detailangaben

Veröffentlicht in:	ACS applied materials & interfaces Jg. 16; H. 3; S. 4117
Hauptverfasser:	Treweek, Benjamin, Akcelik, Volkan, Hodges, Wyatt, Jarzembski, Amun, Bahr, Matthew, Jordan, Matthew, McDonald, Anthony, Yates, Luke, Walsh, Timothy, Pickrell, Gregory
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	United States 24.01.2024
Schlagworte:	thermal boundary conductance finite element method heterogeneously integrated microelectronics gradient-based optimization GaN-diamond devices frequency-domain thermoreflectance
ISSN:	1944-8252, 1944-8252
Online-Zugang:	Weitere Angaben
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