Metal-Catalyzed Electroless Etching of Silicon in Aerated HF/H2O Vapor for Facile Fabrication of Silicon Nanostructures

Inspired by metal corrosion in air, we demonstrate that metal-catalyzed electroless etching (MCEE) of silicon can be performed simply in aerated HF/H2O vapor for facile fabrication of three-dimensional silicon nanostructures such as silicon nanowires (SiNW) arrays. Compared to MCEE commonly performe...

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Bibliographic Details
Published in:Nano letters Vol. 14; no. 8; pp. 4212 - 4219
Main Authors: Hu, Ya, Peng, Kui-Qing, Qiao, Zhen, Huang, Xing, Zhang, Fu-Qiang, Sun, Rui-Nan, Meng, Xiang-Min, Lee, Shuit-Tong
Format: Journal Article
Language:English
Published: Washington, DC American Chemical Society 13.08.2014
Subjects:
Catalytic methods
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of nanofabrication
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
gas phase etching
electrochemistry
galvanic etching
Silicon nanowire
Catalysts
Corrosion
Aqueous solutions
Hafnium
Etching
Silicon
Nanowires
Nanostructures
Arrays
Flexibility
Nanostructured materials
ISSN:1530-6984, 1530-6992, 1530-6992
Online Access:Get full text
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Summary:Inspired by metal corrosion in air, we demonstrate that metal-catalyzed electroless etching (MCEE) of silicon can be performed simply in aerated HF/H2O vapor for facile fabrication of three-dimensional silicon nanostructures such as silicon nanowires (SiNW) arrays. Compared to MCEE commonly performed in aqueous HF solution, the present pseudo gas phase etching offers exceptional simplicity, flexibility, environmental friendliness, and scalability for the fabrication of three-dimensional silicon nanostructures with considerable depths because of replacement of harsh oxidants such as H2O2 and AgNO3 by environmental-green and ubiquitous oxygen in air, minimum water consumption, and full utilization of HF.
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ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/nl500361u