Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes

We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature interna...

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Vydáno v:Nano letters Ročník 20; číslo 5; s. 3651 - 3655
Hlavní autoři: Wang, Junjia, Rousseau, Adrien, Yang, Mei, Low, Tony, Francoeur, Sébastien, Kéna-Cohen, Stéphane
Médium: Journal Article
Jazyk:angličtina
Vydáno: United States American Chemical Society 13.05.2020
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ISSN:1530-6984, 1530-6992, 1530-6992
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Abstract We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.
AbstractList We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.
We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.
Author Wang, Junjia
Yang, Mei
Kéna-Cohen, Stéphane
Rousseau, Adrien
Low, Tony
Francoeur, Sébastien
AuthorAffiliation Department of Engineering Physics
Department of Electrical and Computer Engineering
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  givenname: Junjia
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  fullname: Kéna-Cohen, Stéphane
  email: s.kena-cohen@polymtl.ca
  organization: Department of Engineering Physics
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Keywords heterostructures
black phosphorus
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Title Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes
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