Thermal Conductivity in Biphasic Silicon Nanowires

The work unravels the previously unexplored atomic-scale mechanism involving the interaction of phonons with crystal homointerfaces. Silicon nanowires with engineered isotopic content and crystal phases were chosen for this investigation. Crystal polytypism, manifested by the presence of both diamon...

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Vydané v:Nano letters Ročník 24; číslo 46; s. 14648 - 14655
Hlavní autori: Mukherjee, Samik, Zhang, Zhongwei, Wajs, Marcin, Spadaro, Maria Chiara, Gonzalez-Catala, M., Givan, Uri, Senz, Stephan, Arbiol, Jordi, Francoeur, Sebastien, Volz, Sebastian, Moutanabbir, Oussama
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: United States American Chemical Society 20.11.2024
Predmet:
Crystal Phase Engineering
Phonon Scattering
Thermal Transport
Nanowires
Isotope Controlled Semiconductors
ISSN:1530-6984, 1530-6992, 1530-6992
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Shrnutí:The work unravels the previously unexplored atomic-scale mechanism involving the interaction of phonons with crystal homointerfaces. Silicon nanowires with engineered isotopic content and crystal phases were chosen for this investigation. Crystal polytypism, manifested by the presence of both diamond cubic and rhombohedral phases within the same nanowire, provided a testbed to study the impact of phase homointerfaces on phonon transport. The lattice thermal conductivity and its temperature response were found to be markedly different in the presence of polytypism. Its origin, however, was not traced to any acoustic mismatch as the polytypic nanowires presented a similar phonon spectrum as their counterparts. Rather, phenomenological modeling and atomistic simulations identified and quantified the role of atomically rough homointerfaces and the subsequent phonon scattering from such homointerfaces in shaping the phonon behavior. This framework provides the inputs necessary to advance the design and modeling of phonon transport in nanoscale semiconductors.
Bibliografia:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.4c03720