Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary prop...

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Vydáno v:	ACS nano Ročník 15; číslo 6; s. 10119 - 10129
Hlavní autoři:	Wu, Di, Guo, Jiawen, Wang, Chaoqiang, Ren, Xiaoyan, Chen, Yongsheng, Lin, Pei, Zeng, Longhui, Shi, Zhifeng, Li, Xin Jian, Shan, Chong-Xin, Jie, Jiansheng
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	American Chemical Society 22.06.2021
Témata:	interface passivation broadband photodetectors 2D WS2 layers defect engineering mid-wave infrared
ISSN:	1936-0851, 1936-086X, 1936-086X
On-line přístup:	Získat plný text
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