Dynamic reliability management for near-threshold dark silicon processors

In this article, we propose a new dynamic reliability management (DRM) techniques at the system level for emerging low power dark silicon manycore microprocessors operating in near-threshold region. We mainly consider the electromigration (EM) failures. To leverage the EM recovery effects, which was...

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Veröffentlicht in:	Digest of technical papers - IEEE/ACM International Conference on Computer-Aided Design S. 1 - 7
Hauptverfasser:	Taeyoung Kim, Zeyu Sun, Cook, Chase, Gaddipati, Jagadeesh, Hai Wang, Haibao Chen, Tan, Sheldon X.-D
Format:	Tagungsbericht
Sprache:	Englisch
Veröffentlicht:	ACM 01.11.2016
Schlagworte:	Computational modeling Current density Mathematical model Reliability Silicon Stress Wires
ISSN:	1558-2434
Online-Zugang:	Volltext
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