Continuous Electrical Conductivity Variation in M3(Hexaiminotriphenylene)2 (M = Co, Ni, Cu) MOF Alloys
We report on the continuous fine-scale tuning of band gaps over 0.4 eV and of the electrical conductivity of over 4 orders of magnitude in a series of highly crystalline binary alloys of two-dimensional electrically conducting metal-organic frameworks M3(HITP)2 (M = Co, Ni, Cu; HITP = 2,3,6,7,10,11-...
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| Veröffentlicht in: | Journal of the American Chemical Society Jg. 142; H. 28; S. 12367 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Journal Article |
| Sprache: | Englisch |
| Veröffentlicht: |
15.07.2020
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| ISSN: | 1520-5126, 1520-5126 |
| Online-Zugang: | Weitere Angaben |
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| Zusammenfassung: | We report on the continuous fine-scale tuning of band gaps over 0.4 eV and of the electrical conductivity of over 4 orders of magnitude in a series of highly crystalline binary alloys of two-dimensional electrically conducting metal-organic frameworks M3(HITP)2 (M = Co, Ni, Cu; HITP = 2,3,6,7,10,11-hexaiminotriphenylene). The isostructurality in the M3(HITP)2 series permits the direct synthesis of binary alloys (MxM'3-x)(HITP)2 (MM' = CuNi, CoNi, and CoCu) with metal compositions precisely controlled by precursor ratios. We attribute the continuous tuning of both band gaps and electrical conductivity to changes in free-carrier concentrations and to subtle differences in the interlayer displacement or spacing, both of which are defined by metal substitution. The activation energy of (CoxNi3-x)(HITP)2 alloys scales inversely with an increasing Ni percentage, confirming thermally activated bulk transport.We report on the continuous fine-scale tuning of band gaps over 0.4 eV and of the electrical conductivity of over 4 orders of magnitude in a series of highly crystalline binary alloys of two-dimensional electrically conducting metal-organic frameworks M3(HITP)2 (M = Co, Ni, Cu; HITP = 2,3,6,7,10,11-hexaiminotriphenylene). The isostructurality in the M3(HITP)2 series permits the direct synthesis of binary alloys (MxM'3-x)(HITP)2 (MM' = CuNi, CoNi, and CoCu) with metal compositions precisely controlled by precursor ratios. We attribute the continuous tuning of both band gaps and electrical conductivity to changes in free-carrier concentrations and to subtle differences in the interlayer displacement or spacing, both of which are defined by metal substitution. The activation energy of (CoxNi3-x)(HITP)2 alloys scales inversely with an increasing Ni percentage, confirming thermally activated bulk transport. |
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| Bibliographie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 1520-5126 1520-5126 |
| DOI: | 10.1021/jacs.0c04458 |