On mask layout partitioning for electron projection lithography

Electron projection lithography (EPL) is a leading candidate for next generation lithography (NGL) in VLSI production. The membrane mask used in EPL is divided into sub-fields by struts for structural support. A layout must be partitioned into these sub-fields on mask and then stitched back together...

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Vydané v:Digest of technical papers - IEEE/ACM International Conference on Computer-Aided Design s. 514 - 518
Hlavní autori: Tian, Ruiqi, Yu, Ronggang, Tang, Xiaoping, Wong, D. F.
Médium: Konferenčný príspevok..
Jazyk:English
Vydavateľské údaje: New York, NY, USA ACM 10.11.2002
IEEE
Edícia:ACM Conferences
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ISBN:0780376072, 9780780376076
ISSN:1092-3152
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Shrnutí:Electron projection lithography (EPL) is a leading candidate for next generation lithography (NGL) in VLSI production. The membrane mask used in EPL is divided into sub-fields by struts for structural support. A layout must be partitioned into these sub-fields on mask and then stitched back together by the EPL tool on wafer. To minimize possible stitching errors, partitioning of a mask layout should minimize cuts of layout features in the overlapping area between two adjacent sub-fields. This paper presents the first formulation of the mask layout partitioning problem for EPL as a graph problem. The graph formulation is optimally solved with a shortest path approach. Two other techniques are also presented to speed up computation. Experimental runs on data from a real industry design show excellent results.
Bibliografia:SourceType-Conference Papers & Proceedings-1
ObjectType-Conference Paper-1
content type line 25
ISBN:0780376072
9780780376076
ISSN:1092-3152
DOI:10.1145/774572.774648