ChipletEM: Physics-Based 2.5D and 3D Chiplet Heterogeneous Integration Electromigration Signoff Tool Using Coupled Stress and Thermal Simulation
A review of recent studies on up-to-date IC shows that electromigration (EM) has become one of the major challenges for 2.5D and 3D chiplet heterogeneous integration (CHI) systems. However, most existing researches on EM are focusing on 2D power delivery network without taking Through Silicon Via (T...
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| Vydáno v: | 2025 62nd ACM/IEEE Design Automation Conference (DAC) s. 1 - 7 |
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IEEE
22.06.2025
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| Abstract | A review of recent studies on up-to-date IC shows that electromigration (EM) has become one of the major challenges for 2.5D and 3D chiplet heterogeneous integration (CHI) systems. However, most existing researches on EM are focusing on 2D power delivery network without taking Through Silicon Via (TSV) and non-uniformly thermal distribution condition between dies into consideration. To address this problem, this article proposes a novel EM simulation tool ChipletEM for 2.5D and 3D CHI systems. A finite volume method (FVM) based electrical-thermal co-simulation model is employed to get initial temperature and current density inside TSV. And a finite difference time domain (FDTD) solver is used for hydrostatic stress simulation for both nucleation and postvoiding phases. Thermal migration (TM) effect is also considered in the solver. An analytical TSV thermal solver is employed for temperature distribution simulation and thermal dependent current simulation. The FDTD EM solver and TSV thermal solver are coupled together at each time step so that the interaction among EM stress, thermal stress, void growth, resistance change, IR drop and Joule heating effects can be simulated within a single simulation framework. Simulation results show that compared with Finite Element Method (FEM) tool, average error is 0.61% in nucleation phase and 2.4% in growth phase. And the error of proposed method is reduced from 22.22% to 5.24% compared with state of art atomic flux divergence (AFD) method. |
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| AbstractList | A review of recent studies on up-to-date IC shows that electromigration (EM) has become one of the major challenges for 2.5D and 3D chiplet heterogeneous integration (CHI) systems. However, most existing researches on EM are focusing on 2D power delivery network without taking Through Silicon Via (TSV) and non-uniformly thermal distribution condition between dies into consideration. To address this problem, this article proposes a novel EM simulation tool ChipletEM for 2.5D and 3D CHI systems. A finite volume method (FVM) based electrical-thermal co-simulation model is employed to get initial temperature and current density inside TSV. And a finite difference time domain (FDTD) solver is used for hydrostatic stress simulation for both nucleation and postvoiding phases. Thermal migration (TM) effect is also considered in the solver. An analytical TSV thermal solver is employed for temperature distribution simulation and thermal dependent current simulation. The FDTD EM solver and TSV thermal solver are coupled together at each time step so that the interaction among EM stress, thermal stress, void growth, resistance change, IR drop and Joule heating effects can be simulated within a single simulation framework. Simulation results show that compared with Finite Element Method (FEM) tool, average error is 0.61% in nucleation phase and 2.4% in growth phase. And the error of proposed method is reduced from 22.22% to 5.24% compared with state of art atomic flux divergence (AFD) method. |
| Author | Liu, Jianyun Xu, Qinzhi Ma, Xiaoning Li, Zhiqiang Cao, He Sun, Zeyu Tong, Weijie |
| Author_xml | – sequence: 1 givenname: Zeyu surname: Sun fullname: Sun, Zeyu organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 – sequence: 2 givenname: Weijie surname: Tong fullname: Tong, Weijie organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 – sequence: 3 givenname: Xiaoning surname: Ma fullname: Ma, Xiaoning organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 – sequence: 4 givenname: He surname: Cao fullname: Cao, He organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 – sequence: 5 givenname: Jianyun surname: Liu fullname: Liu, Jianyun organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 – sequence: 6 givenname: Zhiqiang surname: Li fullname: Li, Zhiqiang email: lizhiqiang@ime.ac.cn organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 – sequence: 7 givenname: Qinzhi surname: Xu fullname: Xu, Qinzhi email: xuqinzhi@ime.ac.cn organization: State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029 |
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| Snippet | A review of recent studies on up-to-date IC shows that electromigration (EM) has become one of the major challenges for 2.5D and 3D chiplet heterogeneous... |
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| SubjectTerms | Chiplet integration systems Chiplets Electromigration Finite difference methods Finite element analysis Reliability Stress Thermal resistance Thermal stresses Thermal-electrical co-simulation Three-dimensional displays Through-silicon vias Time-domain analysis TSV |
| Title | ChipletEM: Physics-Based 2.5D and 3D Chiplet Heterogeneous Integration Electromigration Signoff Tool Using Coupled Stress and Thermal Simulation |
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