Curvilinear Optical Proximity Correction via Cardinal Spline

This paper presents a novel curvilinear optical proximity correction (OPC) framework. The proposed approach involves representing mask patterns with control points, which are interconnected through cardinal splines. Mask optimization is achieved by iteratively adjusting these control points, guided...

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Vydáno v:2025 62nd ACM/IEEE Design Automation Conference (DAC) s. 1 - 7
Hlavní autoři: Zheng, Su, Liang, Xiaoxiao, Yu, Ziyang, Ma, Yuzhe, Yu, Bei, Wong, Martin
Médium: Konferenční příspěvek
Jazyk:angličtina
Vydáno: IEEE 22.06.2025
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Abstract This paper presents a novel curvilinear optical proximity correction (OPC) framework. The proposed approach involves representing mask patterns with control points, which are interconnected through cardinal splines. Mask optimization is achieved by iteratively adjusting these control points, guided by lithography simulation. To ensure compliance with mask rule checking (MRC) criteria, we develop comprehensive methods for checking width, space, area, and curvature. Additionally, to match the performance of inverse lithography techniques (ILT), we design algorithms to fit ILT results and resolve MRC violations. Extensive experiments demonstrate the effectiveness of our methodology, highlighting its potential as a viable OPC/ILT alternative.
AbstractList This paper presents a novel curvilinear optical proximity correction (OPC) framework. The proposed approach involves representing mask patterns with control points, which are interconnected through cardinal splines. Mask optimization is achieved by iteratively adjusting these control points, guided by lithography simulation. To ensure compliance with mask rule checking (MRC) criteria, we develop comprehensive methods for checking width, space, area, and curvature. Additionally, to match the performance of inverse lithography techniques (ILT), we design algorithms to fit ILT results and resolve MRC violations. Extensive experiments demonstrate the effectiveness of our methodology, highlighting its potential as a viable OPC/ILT alternative.
Author Liang, Xiaoxiao
Ma, Yuzhe
Yu, Bei
Wong, Martin
Zheng, Su
Yu, Ziyang
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  givenname: Su
  surname: Zheng
  fullname: Zheng, Su
  organization: Chinese University of Hong Kong
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  givenname: Xiaoxiao
  surname: Liang
  fullname: Liang, Xiaoxiao
  organization: Hong Kong University of Science and Technology (GZ)
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  givenname: Ziyang
  surname: Yu
  fullname: Yu, Ziyang
  organization: Chinese University of Hong Kong
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  givenname: Yuzhe
  surname: Ma
  fullname: Ma, Yuzhe
  organization: Hong Kong University of Science and Technology (GZ)
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  givenname: Bei
  surname: Yu
  fullname: Yu, Bei
  organization: Chinese University of Hong Kong
– sequence: 6
  givenname: Martin
  surname: Wong
  fullname: Wong, Martin
  organization: Hong Kong Baptist University
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Snippet This paper presents a novel curvilinear optical proximity correction (OPC) framework. The proposed approach involves representing mask patterns with control...
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SubjectTerms Adaptive optics
Design automation
Fitting
Layout
Lithography
Optical interconnections
Optimization
Scalability
Splines (mathematics)
Testing
Title Curvilinear Optical Proximity Correction via Cardinal Spline
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