APA (7th ed.) Citation

Aggarwal, V., & O'Reilly, U. (2007, April 16). Simulation-based reusable posynomial models for MOS transistor parameters. Proceedings of the conference on Design, automation and test in Europe, 69-74. https://doi.org/10.5555/1266366.1266384

Chicago Style (17th ed.) Citation

Aggarwal, Varun, and Una-May O'Reilly. "Simulation-based Reusable Posynomial Models for MOS Transistor Parameters." Proceedings of the Conference on Design, Automation and Test in Europe 16 Apr. 2007: 69-74. https://doi.org/10.5555/1266366.1266384.

MLA (9th ed.) Citation

Aggarwal, Varun, and Una-May O'Reilly. "Simulation-based Reusable Posynomial Models for MOS Transistor Parameters." Proceedings of the Conference on Design, Automation and Test in Europe, 16 Apr. 2007, pp. 69-74, https://doi.org/10.5555/1266366.1266384.