Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt

The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromag...

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Published in:	arXiv.org
Main Authors:	Schmitt, Christin, Sanchez-Tejerina, Luis, Filianina, Mariia, Fuhrmann, Felix, Meer, Hendrik, Ramos, Rafael, Maccherozzi, Francesco, Backes, Dirk, Saitoh, Eiji, Finocchio, Giovanni, Baldrati, Lorenzo, Kläui, Mathias
Format:	Paper
Language:	English Japanese
Published:	Ithaca Cornell University Library, arXiv.org 05.09.2022
Subjects:	Anisotropy Antiferromagnetism Bilayers Current pulses Domain walls Nickel oxides Spin structure Substrates Switching Thin films
ISSN:	2331-8422
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Abstract	The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of \(\Delta = 98 \pm 10\) nm, demonstrating strong confinement.
AbstractList	The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of \(\Delta = 98 \pm 10\) nm, demonstrating strong confinement.
Author	Maccherozzi, Francesco Finocchio, Giovanni Baldrati, Lorenzo Filianina, Mariia Meer, Hendrik Backes, Dirk Kläui, Mathias Ramos, Rafael Saitoh, Eiji Sanchez-Tejerina, Luis Fuhrmann, Felix Schmitt, Christin
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SubjectTerms	Anisotropy Antiferromagnetism Bilayers Current pulses Domain walls Nickel oxides Spin structure Substrates Switching Thin films
Title	Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt
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