Suchergebnisse - Conductive Logic Programming*

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays von Erfanijazi, Hamidreza, Camunas-Mesa, Luis A., Vianello, Elisa, Serrano-Gotarredona, Teresa, Linares-Barranco, Bernabe

“… To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance …”
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Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays von Perez, Eduardo, Mahadevaiah, Mamathamba Kalishettyhalli, Quesada, Emilio Perez-Bosch, Wenger, Christian

“… ) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO 2 -based RRAM arrays …”
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Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses von Suri, M., Querlioz, D., Bichler, O., Palma, G., Vianello, E., Vuillaume, D., Gamrat, C., DeSalvo, B.

“… We demonstrate an original methodology to use conductive-bridge RAM (CBRAM) devices as, easy to program and low-power, binary synapses with stochastic learning rules …”
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Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing von Quesada, Emilio Perez-Bosch, Mahadevaiah, Mamathamba Kalishettyhalli, Rizzi, Tommaso, Wen, Jianan, Ulbricht, Markus, Krstic, Milos, Wenger, Christian, Perez, Eduardo

“… > 8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels …”
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3-D Stackable Offset-Via Antifuse by Cu BEOL Process in Advanced CMOS Technologies von Yeh, Li-Yu, Chang, Ya-Lin, Chih, Yue-Der, Chang, Jonathan, Lin, Chrong-Jung, King, Ya-Chin

“… The previous work proposed a 1-transistor-2-bit (1T2B) offset via antifuse memory implemented by FinFET CMOS logic processes …”
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Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks von Lepri, N., Glukhov, A., Mannocci, P., Porzani, M., Ielmini, D.

“… IMC accuracy, however, is affected by nonidealities, such as variability of the conductive weights or IR drop along wires due to parasitic resistances, whose impact steeply increases with the increase of array size …”
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Multilevel Resistance Programming in Conductive Bridge Resistive Memory von Mahalanabis, Debayan

“… ) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing …”
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Multi-Nozzle Pneumatic Extrusion-Based Additive Manufacturing System for Printing Sensing Pads von Chen, Kai-Wei, Tsai, Ming-Jong, Lee, Heng-Sheng

“… ) system and applied it to print multi-material polymers and conductive sensing pads. We used pneumatic extrusion nozzles to extrude the liquid material and then cured it by an ultraviolet (UV) light source …”
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WIPO PUBLISHES PATENT OF INTEL FOR "QUBIT DEVICES WITH UNDERCUT CONDUCTIVE CIRCUIT ELEMENTS" (AMERICAN, DUTCH INVENTORS)

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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory von Celano, Umberto, Goux, Ludovic, Degraeve, Robin, Fantini, Andrea, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried

“… Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic …”
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A formal logic approach to firewall packet filtering analysis and generation von Govaerts, John, Bandara, Arosha, Curran, Kevin

“… This work shows that formal logic is an important tool in this respect, because it is particularly apt at modelling real-world situations and its formalism is conductive …”
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Memristive Clustering: A Novel Sustainable Parameter Selection Based on Memristive Circuit Model von Qiao, Kaikai, Ma, Ben, Wang, Lidan, Duan, Shukai

“… In recent years, memristors have attracted much attention in the fields of nonvolatile memory, logic operation and neuromorphic computing …”
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A CBRAM-based compact interconnect switch for non-volatile reconfigurable logic circuits von Onkaraiah, Santhosh, Belleville, Marc, Reyboz, Marina, Clermidy, Fabien, Vianello, Elisa, Portal, Jean-Michel, Muller, Christophe

“… This paper presents a 2-to-2 interconnect switch based on Conductive Bridging Random Access Memories (CBRAMs …”
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Separability in the Ambient Logic von Hirschkoff, Daniel, Lozes, Etienne, Sangiorgi, Davide

“… The \it{Ambient Logic} (AL) has been proposed for expressing properties of process mobility in the calculus of Mobile Ambients (MA …”
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CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: Auditory (Cochlea) and visual (Retina) cognitive processing applications von Suri, M., Bichler, O., Querlioz, D., Palma, G., Vianello, E., Vuillaume, D., Gamrat, C., DeSalvo, B.

“… In this work, we demonstrate an original methodology to use Conductive-Bridge RAM (CBRAM …”
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Thermal performance of thin film heat gauges of gold, silver and nano-composite von Sarma, Shrutidhara, Goyal, Ankit, Gao, Liang, Niu, Xiaodong, Garg, Akhil, Meijuan, Xu, Sandoval, Jayne

“… •Advanced thin film heat transfer gauges are tested under impulsive heat loads.•Metal/CNT composite can be used as low cost and efficient thin film …”
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A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications von Palma, G., Vianello, E., Thomas, O., Oucheikh, H., Onkaraiah, S., Toffoli, A., Carabasse, C., Molas, G., De Salvo, B.

“… ) were electrically characterized in a range of logic compatible programming conditions. A resistance ratio (Roff/Ron …”
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Logic Gates with Ion Transistors von Grebel, Haim

“… Electronic logic gates are the basic building blocks of every computing and micro controlling system …”
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A conductive channel size comparison of silicon dielectric and amorphous silicon antifuses von Chen, K.-L.

“… The relationship of a programmed 'ON' antifuse conductive channel size as a function of the programming current is established for both metal-metal amorphous silicon antifuses and poly-poly nitride/oxide antifuses …”
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Gate induced resistive switching in 1T1R structure with improved uniformity and better data retention von Hongtao Liu, Hangbing Lv, Xiaoxin Xu, Ruoyu Liu, Ling Li, Qi Liu, Shibing Long, Yu Wang, Zongliang Huo, Ming Liu

“… In this work, a novel programming scheme named gate induced resistive switching is proposed to improve the reliability of RRAM in one transistor and one resistor (1T1R) structure …”
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