Search Results - Conductive Logic Programming
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A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays
ISSN: 1549-7747, 1558-3791Published: New York IEEE 01.08.2024Published in IEEE transactions on circuits and systems. II, Express briefs (01.08.2024)“… To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance…”
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Journal Article -
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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
ISSN: 1530-6984, 1530-6992Published: United States American Chemical Society 09.12.2015Published in Nano letters (09.12.2015)“…Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic…”
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Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays
ISSN: 0018-9383, 1557-9646Published: New York IEEE 01.06.2021Published in IEEE transactions on electron devices (01.06.2021)“…) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO 2 -based RRAM arrays…”
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A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications
ISSN: 1930-8876Published: IEEE 01.09.2013Published in Proceedings of the European Solid State Device Research Conference (01.09.2013)“…) were electrically characterized in a range of logic compatible programming conditions. A resistance ratio (Roff/Ron…”
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Conference Proceeding -
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Thermal performance of thin film heat gauges of gold, silver and nano-composite
ISSN: 1359-4311, 1873-5606Published: Oxford Elsevier Ltd 25.01.2019Published in Applied thermal engineering (25.01.2019)“…•Advanced thin film heat transfer gauges are tested under impulsive heat loads.•Metal/CNT composite can be used as low cost and efficient thin film…”
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WIPO PUBLISHES PATENT OF INTEL FOR "QUBIT DEVICES WITH UNDERCUT CONDUCTIVE CIRCUIT ELEMENTS" (AMERICAN, DUTCH INVENTORS)
Published: Washington, D.C HT Digital Streams Limited 19.02.2019Published in US Fed News Service, Including US State News (19.02.2019)Get full text
Newsletter -
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Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses
ISSN: 0018-9383, 1557-9646Published: New York, NY IEEE 01.07.2013Published in IEEE transactions on electron devices (01.07.2013)“… We demonstrate an original methodology to use conductive-bridge RAM (CBRAM) devices as, easy to program and low-power, binary synapses with stochastic learning rules…”
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Journal Article -
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Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing
ISSN: 0018-9383, 1557-9646Published: New York IEEE 01.04.2023Published in IEEE transactions on electron devices (01.04.2023)“…> 8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels…”
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Journal Article -
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3-D Stackable Offset-Via Antifuse by Cu BEOL Process in Advanced CMOS Technologies
ISSN: 0018-9383, 1557-9646Published: New York IEEE 01.12.2023Published in IEEE transactions on electron devices (01.12.2023)“…The previous work proposed a 1-transistor-2-bit (1T2B) offset via antifuse memory implemented by FinFET CMOS logic processes…”
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Multilevel Resistance Programming in Conductive Bridge Resistive Memory
ISBN: 9781339290324, 1339290324Published: ProQuest Dissertations & Theses 01.01.2015“…) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing…”
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Dissertation -
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Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks
ISSN: 0018-9383, 1557-9646Published: New York IEEE 01.03.2024Published in IEEE transactions on electron devices (01.03.2024)“… IMC accuracy, however, is affected by nonidealities, such as variability of the conductive weights or IR drop along wires due to parasitic resistances, whose impact steeply increases with the increase of array size…”
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Journal Article -
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All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device
ISSN: 2199-160X, 2199-160XPublished: 01.10.2022Published in Advanced electronic materials (01.10.2022)“… By electrically programming the initial magnetization states of the device with two opposite switching modes, four Boolean logic gates of AND, NAND, OR, and NOR…”
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A formal logic approach to firewall packet filtering analysis and generation
ISSN: 0269-2821, 1573-7462Published: Dordrecht Springer Netherlands 01.06.2008Published in The Artificial intelligence review (01.06.2008)“… This work shows that formal logic is an important tool in this respect, because it is particularly apt at modelling real-world situations and its formalism is conductive…”
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A conductive channel size comparison of silicon dielectric and amorphous silicon antifuses
ISBN: 0780309782, 9780780309784ISSN: 1524-766XPublished: IEEE 1993Published in 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers (1993)“… The relationship of a programmed 'ON' antifuse conductive channel size as a function of the programming current is established for both metal-metal amorphous silicon antifuses and poly-poly nitride/oxide antifuses…”
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Conference Proceeding -
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Multi-Nozzle Pneumatic Extrusion-Based Additive Manufacturing System for Printing Sensing Pads
ISSN: 2411-5134, 2411-5134Published: Basel MDPI AG 01.09.2020Published in Inventions (Basel) (01.09.2020)“…) system and applied it to print multi-material polymers and conductive sensing pads. We used pneumatic extrusion nozzles to extrude the liquid material and then cured it by an ultraviolet (UV) light source…”
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Journal Article -
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A CBRAM-based compact interconnect switch for non-volatile reconfigurable logic circuits
ISBN: 9781467347402, 146734740XISSN: 2381-3555Published: IEEE 01.05.2013Published in Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) (01.05.2013)“…This paper presents a 2-to-2 interconnect switch based on Conductive Bridging Random Access Memories (CBRAMs…”
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Conference Proceeding -
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CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications
ISSN: 2051-6355, 2051-6355Published: England 29.11.2021Published in Materials horizons (29.11.2021)“…In-memory logic calculations and brain-inspired artificial synaptic neuromorphic computing are expected to solve the limitations of the traditional von Neumann computing architecture…”
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Journal Article -
18
Separability in the Ambient Logic
ISSN: 1860-5974, 1860-5974Published: Logical Methods in Computer Science e.V 04.09.2008Published in Logical methods in computer science (04.09.2008)“…The \it{Ambient Logic} (AL) has been proposed for expressing properties of process mobility in the calculus of Mobile Ambients (MA…”
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Journal Article -
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Two-dimensional reconfigurable electronics enabled by asymmetric floating gate
ISSN: 1998-0124, 1998-0000Published: Beijing Tsinghua University Press 01.05.2022Published in Nano research (01.05.2022)“…). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity…”
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Journal Article -
20
Weak asymptotic solution of the phase field system in the case of confluence of free boundaries in the Stefan problem with undercooling
ISSN: 2331-8422Published: Ithaca Cornell University Library, arXiv.org 30.05.2006Published in arXiv.org (30.05.2006)“…We assume that the Stefan problem with undercooling has a classical solution until the moment of contact of free boundaries and the free boundaries have finite…”
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