Suchergebnisse - "Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices"
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1
Ultraviolet light-emitting diodes based on group three nitrides
ISSN: 1749-4885, 1749-4893Veröffentlicht: London Nature Publishing Group 01.02.2008Veröffentlicht in Nature photonics (01.02.2008)Volltext
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Flexible and stretchable electrodes for dielectric elastomer actuators
ISSN: 0947-8396, 1432-0630Veröffentlicht: Heidelberg Springer 01.02.2013Veröffentlicht in Applied physics. A, Materials science & processing (01.02.2013)Volltext
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Doping-Less Tunnel Field Effect Transistor: Design and Investigation
ISSN: 0018-9383, 1557-9646Veröffentlicht: New York, NY IEEE 01.10.2013Veröffentlicht in IEEE transactions on electron devices (01.10.2013)“… Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge …”
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CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects
ISSN: 1749-4885, 1749-4893Veröffentlicht: London Nature Publishing Group 20.12.2009Veröffentlicht in Nature photonics (20.12.2009)Volltext
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SpiNNaker: A 1-W 18-Core System-on-Chip for Massively-Parallel Neural Network Simulation
ISSN: 0018-9200, 1558-173XVeröffentlicht: New York, NY IEEE 01.08.2013Veröffentlicht in IEEE journal of solid-state circuits (01.08.2013)“… The modelling of large systems of spiking neurons is computationally very demanding in terms of processing power and communication. SpiNNaker - Spiking Neural …”
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‘Memristive’ switches enable ‘stateful’ logic operations via material implication
ISSN: 0028-0836, 1476-4687, 1476-4687Veröffentlicht: London Nature Publishing Group UK 08.04.2010Veröffentlicht in Nature (London) (08.04.2010)“… A good memory for logic The possibility of combining the electrical properties of a memory element and a resistor — in a memristor or memristive device — was …”
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SnO2-Based Dye-Sensitized Hybrid Solar Cells Exhibiting Near Unity Absorbed Photon-to-Electron Conversion Efficiency
ISSN: 1530-6984, 1530-6992, 1530-6992Veröffentlicht: Washington, DC American Chemical Society 14.04.2010Veröffentlicht in Nano letters (14.04.2010)“… Improving the solar light harvesting and photon-to-electron conversion efficiency for hybrid, organic−inorganic photovoltaics are critical challenges. Titania …”
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Reliability challenges in 3D IC packaging technology
ISSN: 0026-2714, 1872-941XVeröffentlicht: Kidlington Elsevier Ltd 01.03.2011Veröffentlicht in Microelectronics and reliability (01.03.2011)“… At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical …”
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InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
ISSN: 1530-6984Veröffentlicht: Washington, DC American Chemical Society 09.11.2011Veröffentlicht in Nano letters (09.11.2011)Volltext
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Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors
ISSN: 0741-3106, 1558-0563Veröffentlicht: New York, NY IEEE 01.11.2011Veröffentlicht in IEEE electron device letters (01.11.2011)“… This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and …”
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Novel Carbon Nanotube−Polystyrene Foam Composites for Electromagnetic Interference Shielding
ISSN: 1530-6984, 1530-6992Veröffentlicht: Washington, DC American Chemical Society 01.11.2005Veröffentlicht in Nano letters (01.11.2005)“… A novel carbon nanotube−polystyrene foam composite has been fabricated successfully. The electromagnetic interference (EMI) shielding effectiveness …”
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Polymer self assembly in semiconductor microelectronics
ISSN: 0018-8646, 0018-8646Veröffentlicht: Armonk, NY International Business Machines 01.09.2007Veröffentlicht in IBM journal of research and development (01.09.2007)Volltext
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A 1.2-V 8.3-nJ CMOS Humidity Sensor for RFID Applications
ISSN: 0018-9200, 1558-173XVeröffentlicht: New York, NY IEEE 01.10.2013Veröffentlicht in IEEE journal of solid-state circuits (01.10.2013)“… This paper presents a fully integrated CMOS humidity sensor for a smart RFID sensor platform. The sensing element is a CMOS-compatible capacitive humidity …”
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ITO-free flexible polymer solar cells: From small model devices to roll-to-roll processed large modules
ISSN: 1566-1199, 1878-5530Veröffentlicht: Amsterdam Elsevier B.V 01.04.2011Veröffentlicht in Organic electronics (01.04.2011)“… R2R processed ITO-free large area flexible polymer solar cells. [Display omitted] ► ITO-free polymer solar cells were prepared using Al/Cr as electron contact …”
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A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology
ISSN: 0018-9200, 1558-173XVeröffentlicht: New York, NY IEEE 01.06.2012Veröffentlicht in IEEE journal of solid-state circuits (01.06.2012)“… We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array …”
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High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors
ISSN: 0741-3106, 1558-0563Veröffentlicht: New York, NY IEEE 01.10.2013Veröffentlicht in IEEE electron device letters (01.10.2013)“… Schottky junction near-infrared photodetectors were constructed by combing monolayer graphene (MLG) film and bulk silicon. Notably, the device could operate at …”
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CMOS Full-Adders for Energy-Efficient Arithmetic Applications
ISSN: 1063-8210, 1557-9999Veröffentlicht: New York, NY IEEE 01.04.2011Veröffentlicht in IEEE transactions on very large scale integration (VLSI) systems (01.04.2011)“… We present two high-speed and low-power full-adder cells designed with an alternative internal logic structure and pass-transistor logic styles that lead to …”
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A 0.018% THD+N, 88-dB PSRR PWM Class-D Amplifier for Direct Battery Hookup
ISSN: 0018-9200, 1558-173XVeröffentlicht: New York, NY IEEE 01.02.2012Veröffentlicht in IEEE journal of solid-state circuits (01.02.2012)“… A low-distortion third-order class-D amplifier that is fully integrated into a 0.18-μ m CMOS process was designed for direct battery hookup in a mobile …”
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Air Stable, Photosensitive, Phase Pure Iron Pyrite Nanocrystal Thin Films for Photovoltaic Application
ISSN: 1530-6984, 1530-6992, 1530-6992Veröffentlicht: Washington, DC American Chemical Society 09.11.2011Veröffentlicht in Nano letters (09.11.2011)“… Iron pyrite (FeS2) is a naturally abundant and nontoxic photovoltaic material that can potentially make devices as efficient as silicon-based ones; however …”
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Graphene-Enabled Silver Nanoantenna Sensors
ISSN: 1530-6984, 1530-6992, 1530-6992Veröffentlicht: Washington, DC American Chemical Society 08.08.2012Veröffentlicht in Nano letters (08.08.2012)“… Silver is the ideal material for plasmonics because of its low loss at optical frequencies but is often replaced by a more lossy metal, gold. This is because …”
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