Suchergebnisse - "SIMULATION Program with Integrated Circuit Emphasis"
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Closed-Form Capacitance Network Compact Model and Monte Carlo Analysis of the GIDL-Assisted Potential Growth in 3-D NAND Flash String
ISSN: 0278-0070, 1937-4151Veröffentlicht: New York IEEE 01.11.2025Veröffentlicht in IEEE transactions on computer-aided design of integrated circuits and systems (01.11.2025)“… This study proposes new physics-based terminal capacitance models derived from the select gate (SG) channel potential in the gate-induced drain leakage …”
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Single Event Transient Characterization of a Low-Dropout Regulator in a Sub-20 nm CMOS Technology
ISSN: 0018-9499, 1558-1578Veröffentlicht: New York IEEE 01.10.2025Veröffentlicht in IEEE transactions on nuclear science (01.10.2025)“… In this article, the mechanism of single event transient (SET) of a low-dropout (LDO) regulator fabricated in a sub-20 nm fin-field effect transistor (FinFET) …”
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Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators
ISSN: 0018-9499, 1558-1578Veröffentlicht: New York IEEE 01.06.2025Veröffentlicht in IEEE transactions on nuclear science (01.06.2025)“… This article introduces a novel dynamic voltage-dependent (DVD) model for simulating single-event transients (SETs) in complementary metal-oxide-semiconductor …”
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Modeling Electrothermal Feedback of Superconducting Nanowire Single-Photon Detectors in SPICE
ISSN: 1051-8223, 1558-2515Veröffentlicht: New York IEEE 01.12.2025Veröffentlicht in IEEE transactions on applied superconductivity (01.12.2025)“… Superconducting nanowire single-photon detectors (SNSPDs) exhibit complex switching behaviors due to electrothermal feedback during the detection process …”
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Automated Flexible Modeling for Various Full-SiC Power Modules
ISSN: 0885-8993, 1941-0107Veröffentlicht: New York IEEE 01.05.2023Veröffentlicht in IEEE transactions on power electronics (01.05.2023)“… Various types of SiC power module product have been developed in recent years. Therefore, the device model developing speed and the flexibility corresponding …”
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A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories
ISSN: 0018-9383, 1557-9646Veröffentlicht: New York IEEE 01.08.2020Veröffentlicht in IEEE transactions on electron devices (01.08.2020)“… We developed a compact model for program transient simulation of 3-D charge-trap NAND flash on a bitline (BL) string level. By implanting the trapped charge …”
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EKV Model Based Analog/RF CMOS Design Pre-SPICE Tool
ISSN: 1735-2827, 2383-3890Veröffentlicht: Iran University of Science and Technology 01.09.2025Veröffentlicht in Iranian journal of electrical & electronic engineering (01.09.2025)“… A novel simplified EKV model base analog/RF CMOS design pre-SPICE tool is presented in this paper. Addition to facilitating the sizing process, this CAD tool …”
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Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology
ISSN: 0018-9499, 1558-1578Veröffentlicht: New York IEEE 01.04.2025Veröffentlicht in IEEE transactions on nuclear science (01.04.2025)“… In this article, a doped fully depleted silicon on insulator (FDSOI) behavior for the 65-nm partially depleted silicon on insulator (PDSOI) technology is …”
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SPICE-Based Circuit Analysis of Power Flow Coupling Effect in Double-Input Cuk--Buck DC-DC Converters
ISSN: 0885-8993, 1941-0107Veröffentlicht: New York IEEE 01.04.2022Veröffentlicht in IEEE transactions on power electronics (01.04.2022)“… An equivalent simulation program with integrated circuit emphasis (SPICE) based circuit is derived from the proposed small-signal averaged model of …”
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Investigation and SPICE Compact Model of Spacer Region for Static Characteristics of 3-D NAND Flash Memories
ISSN: 0018-9383, 1557-9646Veröffentlicht: New York IEEE 01.10.2020Veröffentlicht in IEEE transactions on electron devices (01.10.2020)“… In this article, we present an appropriate compact model of spacer (SP) region for static characteristics of 3-D NAND flash memories. Though many studies on …”
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A Hybrid FDTD-SPICE Method for Predicting the Coupling Response of Wireless Communication System
ISSN: 0018-9375, 1558-187XVeröffentlicht: New York IEEE 01.10.2021Veröffentlicht in IEEE transactions on electromagnetic compatibility (01.10.2021)“… This article presents a hybrid finite-difference time-domain-simulation program with integrated circuit emphasis (FDTD-SPICE) method for analyzing the …”
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SPICE-Based Multiphysics Model to Analyze the Dynamics of Ferroelectric Negative-Capacitance-Electrostatic MEMS Hybrid Actuators
ISSN: 0018-9383, 1557-9646Veröffentlicht: New York IEEE 01.11.2020Veröffentlicht in IEEE transactions on electron devices (01.11.2020)“… We propose a Simulation Program with Integrated Circuit Emphasis (SPICE)-based multiphysics framework to model ferroelectric negative-capacitance-electrostatic …”
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GPU-Accelerated Adaptive PCBSO Mode-Based Hybrid RLA for Sparse LU Factorization in Circuit Simulation
ISSN: 0278-0070, 1937-4151Veröffentlicht: New York IEEE 01.11.2021Veröffentlicht in IEEE transactions on computer-aided design of integrated circuits and systems (01.11.2021)“… LU factorization is extensively used in engineering and scientific computations for solution of large set of linear equations. Particularly, circuit simulators …”
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An Accurate Process-Induced Variability-Aware Compact Model-Based Circuit Performance Estimation for Design-Technology Co-Optimization
ISSN: 0018-9383, 1557-9646Veröffentlicht: New York IEEE 01.01.2022Veröffentlicht in IEEE transactions on electron devices (01.01.2022)“… In sub-10-nm fin field-effect transistors (FinFETs), line-edge roughness (LER) and metal-gate granularity (MGG) are the two most dominant sources of …”
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Dynamic GPU Parallel Sparse LU Factorization for Fast Circuit Simulation
ISSN: 1063-8210, 1557-9999Veröffentlicht: New York IEEE 01.11.2018Veröffentlicht in IEEE transactions on very large scale integration (VLSI) systems (01.11.2018)“… Lower-upper (LU) factorization is widely used in many scientific computations. It is one of the most critical modules in circuit simulators, such as the …”
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P‐61: Distinguished Poster: Research on Parameter Extraction of Thin‐Film Transistors Based on Swarm Intelligence
ISSN: 0097-966X, 2168-0159Veröffentlicht: Campbell Wiley Subscription Services, Inc 01.06.2023Veröffentlicht in SID International Symposium Digest of technical papers (01.06.2023)“… Automatic parameter extraction of RPI Model for Polysilicon Thin‐Film Transistors is achieved by genetic algorithm(GA) and Particle swarm optimization(PSO) …”
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Research on parameter extraction of thin‐film transistors based on swarm intelligence
ISSN: 1071-0922, 1938-3657Veröffentlicht: Campbell Wiley Subscription Services, Inc 01.05.2023Veröffentlicht in Journal of the Society for Information Display (01.05.2023)“… The development of integrated circuits for displays and other applications requires semiconductor device models and appropriate parameter extraction techniques …”
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Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance
ISSN: 2199-160X, 2199-160XVeröffentlicht: Seoul John Wiley & Sons, Inc 01.06.2023Veröffentlicht in Advanced electronic materials (01.06.2023)“… Cryogenic‐computing draws attention due to its variety of applications such as cloud‐computing, aerospace electronics, and quantum computing. Low temperature …”
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SPICE Behaviors of Double Memristor Circuits Using Cosine Window Function
ISSN: 2296-424X, 2296-424XVeröffentlicht: Frontiers Media S.A 03.03.2021Veröffentlicht in Frontiers in physics (03.03.2021)“… In this paper, a Hewlett-Packard (HP) memristor model with a new window function and its versatile characteristics are presented. SPICE behaviors of the linear …”
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On-chip tunable Memristor-based flash-ADC converter for artificial intelligence applications
ISSN: 1751-858X, 1751-8598, 1751-8598Veröffentlicht: Stevenage The Institution of Engineering and Technology 01.01.2020Veröffentlicht in IET circuits, devices & systems (01.01.2020)“… This study presents a novel hybrid memristor (MR)-complementary metal–oxide–semiconductor-based flash analogue-to-digital converter (ADC). The speed and …”
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