Výsledky vyhľadávania - "Ovcharenko, E. N."

Two-Frequency Pulsed Laser Irradiation to Stimulate the Development of Coniferous Trees Autor Lobanov, A. V., Apasheva, L. M., Smurova, L. A., Ovcharenko, E. N., Budnik, M. I., Savransky, V. V.

“…The possibility of using radiation from a two-frequency pulsed copper vapor laser with wavelengths of 510.6 and 578.2 nm with an exposure of 30 to 120 s to…”
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Erratum to: Two-Frequency Pulsed Laser Irradiation to Stimulate the Development of Coniferous Trees Autor Lobanov, A. V., Apasheva, L. M., Smurova, L. A., Ovcharenko, E. N., Budnik, M. I., Savransky, V. V.

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Water Activated by a Microwave Plasma Argon Jet as a Factor Stimulating the Germination of Plant Seeds Autor Sergeichev, K. F., Lukina, N. A., Apasheva, L. M., Ovcharenko, E. N., Lobanov, A. V.

“…Using the new electrodeless microwave technology for generating plasma in an open atmosphere, solutions of hydrogen peroxide and nitrogen compounds are…”
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EFFICIENCY OF MEDICATIONS WITH PROBIOTIC POTENCY IN THE PROCESS OF PROSTHODONTIC TREATMENT WITH WHOLE PIECE PERMANENT STRUCTURES OF DENTAL PROSTHESES OF PATIENTS WITH DIABETES MELLITUS TYPE 2 Autor Ovcharenko, E. N., Zadko, S. I., Kharchenko, V. Z., Severinova, S. K., Lavrovskaya, O. M., Irza, O. L., Lavrovskaya, Ya. A.

“…Background. Dental health in patients with diabetes mellitus type 2 and methods of its correction is an important part in the complex of medical and preventive…”
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Stimulation of Plant Growth with an Aqueous Solution Activated by Glow Discharge Plasma Autor Belov, S. V., Apasheva, L. M., Danileiko, Yu. K., Egorov, A. B., Lobanov, A. V., Lukanin, V. I., Ovcharenko, E. N., Savransky, V. V., Shilin, L. G.

“…—This paper presents the results on the application of low-concentration aqueous solutions of strong electrolytes activated by glow discharge plasma for plant…”
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Thermal expansion of finely filled polymer nanocomposites Autor Afashagova, Z Kh, Ovcharenko, E N, Kozlov, G V, Mikitaev, A K

“…As is known, thermal expansion--thermal strain consisting of change in the dimensions of a solid owing to a change in its temperature--reflects the forces…”
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Preparing educators for work in an inclusive educational environment of a preschool educational organization Autor Rodionova, O.N., Denisova, L.L., Ovcharenko, E.N.

“…The article considered the essence of training educators to work in an inclusive educational environment of a preschool educational organization. The problems…”
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PROBLEMS ASSOCIATED WITH DENTAL CARE IN DISABLED PEOPLE Autor I. G. Romanenko, Ya. A. Lavrovskaya, O. M. Lavrovskaya, V. A. Ivanidenko, E. N. Ovcharenko, O. N. Postnikova, T. A. Logadyr'

“…This article discusses the issues of at-home care and associated difficulties, as well as possibilities of providing dental care to people with disabilities…”
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Fractal model of the cracking resistance of modified polyethylene Autor Kozlov, G. V., Ovcharenko, E. N., Zaikov, G. E.

“…It has been demonstrated that the fracture criterion for polyethylene samples in stress cracking tests in active media is met when the polar liquid reaches the…”
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AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz Autor Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.

“…The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate…”
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AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz Autor Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.

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AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz Autor Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.

“…The N -Al 0.27 Ga 0.73 N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L g (ranging from 170 nm to 0.5 μm) and gate widths W s…”
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