Suchergebnisse - "Gas phase etching"
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High‐Performance Yolk‐Shell Structured Silicon‐Carbon Composite Anode Preparation via One‐Step Gas‐Phase Deposition and Etching Technique
ISSN: 1616-301X, 1616-3028Veröffentlicht: Hoboken Wiley Subscription Services, Inc 01.01.2025Veröffentlicht in Advanced functional materials (01.01.2025)“… For producing high‐capacity silicon (Si) anodes, a combined gas‐phase deposition and etching technique is developed to construct yolk‐shell structured …”
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Gas-phase chlorohydrocarbon etching for the synthesis of MXenes
ISSN: 1385-8947Veröffentlicht: Elsevier B.V 01.09.2025Veröffentlicht in Chemical engineering journal (Lausanne, Switzerland : 1996) (01.09.2025)“… MXenes, an emerging class of 2D transition metal carbides and nitrides, have significantly broadened the scope of functional materials due to their diverse …”
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Dual Redox Reaction Sites for Pseudocapacitance Based on Ti and −P Functional Groups of Ti3C2PBrx MXene
ISSN: 1433-7851, 1521-3773, 1521-3773Veröffentlicht: Weinheim Wiley Subscription Services, Inc 01.07.2024Veröffentlicht in Angewandte Chemie International Edition (01.07.2024)“… MXenes have extensive applications due to their different properties determined by intrinsic structures and various functional groups. Exploring different …”
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A feasible and environmentally friendly method to simultaneously synthesize MoS2 quantum dots and pore-rich monolayer MoS2 for hydrogen evolution reaction
ISSN: 0360-3199, 1879-3487Veröffentlicht: Elsevier Ltd 01.01.2020Veröffentlicht in International journal of hydrogen energy (01.01.2020)“… MoS2 has been one of a widely researched hydrogen evolution reaction (HER) catalyst materials in recent years. However, the basal plane of MoS2 is considered …”
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Dual Redox Reaction Sites for Pseudocapacitance Based on Ti and −P Functional Groups of Ti3C2PBrx MXene
ISSN: 0044-8249, 1521-3757Veröffentlicht: Weinheim Wiley Subscription Services, Inc 01.07.2024Veröffentlicht in Angewandte Chemie (01.07.2024)“… MXenes have extensive applications due to their different properties determined by intrinsic structures and various functional groups. Exploring different …”
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Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction
ISSN: 0039-6028, 1879-2758Veröffentlicht: Elsevier B.V 01.11.2016Veröffentlicht in Surface science (01.11.2016)“… Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on …”
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Enrichment of semiconducting single-walled carbon nanotubes by simple equipment and solar radiation
ISSN: 1361-6528, 1361-6528Veröffentlicht: England 08.02.2019Veröffentlicht in Nanotechnology (08.02.2019)“… High-purity semiconducting (s-) single-walled carbon nanotubes (SWCNTs) have great potential to replace silicon-based materials for microelectronic devices …”
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Metal-Catalyzed Electroless Etching of Silicon in Aerated HF/H2O Vapor for Facile Fabrication of Silicon Nanostructures
ISSN: 1530-6984, 1530-6992, 1530-6992Veröffentlicht: Washington, DC American Chemical Society 13.08.2014Veröffentlicht in Nano letters (13.08.2014)“… Inspired by metal corrosion in air, we demonstrate that metal-catalyzed electroless etching (MCEE) of silicon can be performed simply in aerated HF/H2O vapor …”
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Nanoscopic tip sensors fabricated by gas phase etching of optical glass fibers
ISSN: 1674-9251, 2190-7439Veröffentlicht: Beijing University of Electronic Science and Technology of China 01.12.2012Veröffentlicht in Photonic sensors (Berlin) (01.12.2012)“… Silica-based fiber tips are used in a variety of spectroscopic, micro- or nano-scopic optical sensor applications and photonic micro-devices. The …”
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Characterization of anhydrous HF gas-phase etching with CH3OH for sacrificial oxide removal
ISSN: 0924-4247Veröffentlicht: 01.01.1998Veröffentlicht in Sensors and actuators. A. Physical. (01.01.1998)Volltext
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Gas-phase etching with ClF 3 gas at atmospheric pressure and at room temperature – anisotropic etching
ISSN: 0169-4332, 1873-5584Veröffentlicht: Elsevier B.V 1998Veröffentlicht in Applied surface science (1998)“… We find that single crystal Si (c-Si) is etched anisotropically in the gas phase with ClF 3 gas at atmospheric pressure and at room temperature (RT). The …”
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Characterization of anhydrous HF gas-phase etching with CH 3OH for sacrificial oxide removal
ISSN: 0924-4247, 1873-3069Veröffentlicht: Elsevier B.V 1998Veröffentlicht in Sensors and actuators. A. Physical. (1998)“… One of the major issues in surface micromachining is process-induced failures of freestanding microstructures after the removal of sacrificial layers. This …”
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AlGaAs-GaAs buried heterostructure laser with vertically etched facets and wide-bandgap optical windows by in situ C2H5Cl gas-phase etching and MOCVD regrowth
ISSN: 1041-1135Veröffentlicht: IEEE 01.06.1997Veröffentlicht in IEEE photonics technology letters (01.06.1997)“… Vertical facets and oblique sidewalls are realized in AlGaAs-GaAs graded index separate confinement (GRINSCH) structure along the [01~1] and [01~1~] direction, …”
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