Výsledky vyhľadávania - Simulation Program with Integrated Circuit Emphasis device model

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    On-chip tunable Memristor-based flash-ADC converter for artificial intelligence applications Autor Humood, Khaled, Mohammad, Baker, Abunahla, Heba, Azzam, Anas

    ISSN: 1751-858X, 1751-8598, 1751-8598
    Vydavateľské údaje: Stevenage The Institution of Engineering and Technology 01.01.2020
    Vydané v IET circuits, devices & systems (01.01.2020)
    “… This is achieved by utilising the highly analogue behaviour observed in multi-state MR devices fabricated and tested by the authors' group…”
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    Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model Autor Jin, J.W., Oudwan, M., Daineka, D., Moustapha, O., Bonnassieux, Y.

    ISSN: 1751-858X, 1751-8598
    Vydavateľské údaje: Stevenage John Wiley & Sons, Inc 01.03.2012
    Vydané v IET circuits, devices & systems (01.03.2012)
    “…The universal simulation program with integrated circuit emphasis (SPICE) model for hydrogenated amorphous silicon thin-film transistor is largely used in circuit simulation…”
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    Noise properties of contactless integrated photonic probes on silicon waveguides Autor Wang, Zhao, Zhang, Ziyu, Zou, Kai, Meng, Yun, Liu, Haiyi, Hu, Xiaolong

    ISSN: 1539-4522, 2155-3165, 1539-4522
    Vydavateľské údaje: United States 01.01.2023
    “… Finally, we establish a circuit model and use the Simulation Program with Integrated Circuit Emphasis to model and simulate the noise properties of these devices…”
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    XBarNet: Computationally Efficient Memristor Crossbar Model Using Convolutional Autoencoder Autor Zhang, Yuhang, He, Guanghui, Wang, Guoxing, Li, Yongfu

    ISSN: 0278-0070, 1937-4151
    Vydavateľské údaje: New York IEEE 01.12.2022
    “… The conventional device-level memristor model with a circuit simulator such as simulation program with integrated circuit emphasis (SPICE…”
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    Compact electrothermal model of laboratory made GaN Schottky diodes Autor Górecki, Krzysztof, Górecki, Paweł

    ISSN: 1356-5362, 1758-812X
    Vydavateľské údaje: Bradford Emerald Publishing Limited 21.05.2020
    Vydané v Microelectronics international (21.05.2020)
    “… Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis…”
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    A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling Autor Batas, D, Fiedler, H

    ISSN: 1536-125X, 1941-0085
    Vydavateľské údaje: New York, NY IEEE 01.03.2011
    Vydané v IEEE transactions on nanotechnology (01.03.2011)
    “…This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated circuits emphasis (SPICE…”
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    Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing Autor Bhattacharjee, Abhiroop, Nguyen, Thanh Chien, Pachauri, Vivek, Ingebrandt, Sven, Vu, Xuan Thang

    ISSN: 2072-666X, 2072-666X
    Vydavateľské údaje: Switzerland MDPI AG 31.12.2020
    Vydané v Micromachines (Basel) (31.12.2020)
    “… We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE…”
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    Neural Compact Modeling Framework for Flexible Model Parameter Selection with High Accuracy and Fast SPICE Simulation Autor Eom, Seungjoon, Yun, Hyeok, Jang, Hyundong, Cho, Kyeongrae, Lee, Seunghwan, Jeong, Jinsu, Baek, Rock‐Hyun

    ISSN: 2640-4567, 2640-4567
    Vydavateľské údaje: Weinheim John Wiley & Sons, Inc 01.04.2024
    Vydané v Advanced intelligent systems (01.04.2024)
    “…‐device applications and reduces the quality of circuit simulations. To address these drawbacks, a neural compact modeling framework with a flexible selection of technology…”
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    Modeling Electrothermal Feedback of Superconducting Nanowire Single-Photon Detectors in SPICE Autor Nguyen, Hanson, Simon, Alejandro, Foster, Reed, Berggren, Karl K.

    ISSN: 1051-8223, 1558-2515
    Vydavateľské údaje: New York IEEE 01.12.2025
    “… Here, we build upon a growing architecture of simulation program with integrated circuit emphasis tools for superconducting nanowire devices by capturing complex residual heating effects in a compact…”
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    SPICE modeling of nonlinear memristive behavior Autor Vourkas, Ioannis, Batsos, Athanasios, Sirakoulis, Georgios Ch

    ISSN: 0098-9886, 1097-007X
    Vydavateľské údaje: Bognor Regis Wiley Subscription Services, Inc 01.05.2015
    “… Modeling of memristive devices is essential for circuit design, and a number of Simulation Program with Integrated Circuit Emphasis (SPICE…”
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    Multi-grayscale driving system for a passive-matrix alternating current electroluminescence display with low crosstalk by an asymmetric half-voltage driving strategy Autor Zhou, Tao, He, Junjie, Yang, Kainian, Shi, Jintao, Chen, Weichun, Zhang, Yue, Peng, Lisha, Zheng, Shaoyong, Chen, Peining, Deng, Shaozhi, Yang, Bo-Ru

    ISSN: 1539-4794, 1539-4794
    Vydavateľské údaje: United States 15.08.2025
    Vydané v Optics letters (15.08.2025)
    “… In this study, a circuit model of ACEL is proposed, which is used to simulate the optoelectronic characteristics of ACEL devices as well as the crosstalk of PMACEL by the Simulation Program…”
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    Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization Autor Devoge, Paul, Aziza, Hassen, Lorenzini, Philippe, Masson, Pascal, Malherbe, Alexandre, Julien, Franck, Marzaki, Abderrezak, Regnier, Arnaud, Niel, Stephan

    ISSN: 0038-1101, 1879-2405
    Vydavateľské údaje: Elsevier Ltd 01.03.2023
    Vydané v Solid-state electronics (01.03.2023)
    “… (Simulation Program with Integrated Circuit Emphasis) of the new device is developed to evaluate…”
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    Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node Autor Seon, Yoongeun, Chang, Jeesoo, Yoo, Changhyun, Jeon, Jongwook

    ISSN: 2079-9292, 2079-9292
    Vydavateľské údaje: Basel MDPI AG 15.01.2021
    Vydané v Electronics (Basel) (15.01.2021)
    “…A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in the form of a sheet…”
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    Development of Nonlinear Electromechanical Coupled Macro Model for Electrostatic MEMS Cantilever Beam Autor Singh, Akanksha D., Patrikar, Rajendra M.

    ISSN: 2169-3536, 2169-3536
    Vydavateľské údaje: Piscataway IEEE 2019
    Vydané v IEEE access (2019)
    “… These devices are usually interfaced with electronic circuits. It is important to build its macro model for rapid system design and simulation…”
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    Symbolic Regression Based on Kolmogorov–Arnold Networks for Gray-Box Simulation Program with Integrated Circuit Emphasis Model of Generic Transistors Autor Huang, Yiming, Li, Bin, Wu, Zhaohui, Liu, Wenchao

    ISSN: 2079-9292, 2079-9292
    Vydavateľské údaje: Basel MDPI AG 16.03.2025
    Vydané v Electronics (Basel) (16.03.2025)
    “…In this paper, a novel approach to symbolic regression using Kolmogorov–Arnold Networks (KAN) for developing gray-box Simulation Program with Integrated Circuit Emphasis models of generic transistors is proposed…”
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    Technology Computer-Aided Design-Based Simulation Program with Integrated Circuit Emphasis Model for Back-Channel-Etched Thin-Film Transistors with Floating Metal Components Autor Kim, Kihwan, Kim, Myungeon, Cho, Hyunguk, Cho, Youngmi, Kim, Yongjo, Choi, Byoungdeog

    ISSN: 1533-4899, 1533-4899
    Vydavateľské údaje: 01.11.2020
    “… (Technology computer-aided design) simulations (Atlas 3D) to predict the characteristics of a-Si TFTs with various active layer thicknesses and numbers of floating metal components…”
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    (V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance Autor Biolek, Dalibor, Kolka, Zdenek, Biolkova, Viera, Biolek, Zdenek, Kvatinsky, Shahar

    ISSN: 2169-3536, 2169-3536
    Vydavateľské údaje: Piscataway IEEE 2021
    Vydané v IEEE access (2021)
    “… (Simulation Program with Integrated Circuit Emphasis) environment. The modeling starts from the recently introduced TEAM…”
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    First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs Autor Maeda, Noriyuki, Kaneko, Mitsuaki, Tanaka, Hajime, Kimoto, Tsunenobu

    ISSN: 2995-8423, 2995-8423
    Vydavateľské údaje: 01.06.2025
    Vydané v APL Electronic Devices (01.06.2025)
    “…) applicable in a high-temperature range was constructed, and the validity of the model was evaluated in Simulation Program with Integrated Circuit Emphasis (SPICE) simulations…”
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    Simulation Program with Integrated Circuit Emphasis Compact Modeling of a Dual-Gate Positive-Feedback Field-Effect Transistor for Circuit Simulations Autor Kwon, Min-Woo, Park, Kyungchul, Baek, Myung-Hyun, Hwang, Sungmin, Jang, Tejin, Park, Byung-Gook

    ISSN: 1533-4880
    Vydavateľské údaje: United States 01.10.2019
    “…) for circuit simulations by fitting the model to measurement results. We fabricated a FBFET and investigated the DC and transient characteristics…”
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