Výsledky vyhľadávania - Conductive Logic Programming
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A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays
ISSN: 1549-7747, 1558-3791Vydavateľské údaje: New York IEEE 01.08.2024Vydané v IEEE transactions on circuits and systems. II, Express briefs (01.08.2024)“… To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance…”
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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
ISSN: 1530-6984, 1530-6992Vydavateľské údaje: United States American Chemical Society 09.12.2015Vydané v Nano letters (09.12.2015)“…Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic…”
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Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays
ISSN: 0018-9383, 1557-9646Vydavateľské údaje: New York IEEE 01.06.2021Vydané v IEEE transactions on electron devices (01.06.2021)“…) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO 2 -based RRAM arrays…”
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A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications
ISSN: 1930-8876Vydavateľské údaje: IEEE 01.09.2013Vydané v Proceedings of the European Solid State Device Research Conference (01.09.2013)“…) were electrically characterized in a range of logic compatible programming conditions. A resistance ratio (Roff/Ron…”
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Thermal performance of thin film heat gauges of gold, silver and nano-composite
ISSN: 1359-4311, 1873-5606Vydavateľské údaje: Oxford Elsevier Ltd 25.01.2019Vydané v Applied thermal engineering (25.01.2019)“…•Advanced thin film heat transfer gauges are tested under impulsive heat loads.•Metal/CNT composite can be used as low cost and efficient thin film…”
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WIPO PUBLISHES PATENT OF INTEL FOR "QUBIT DEVICES WITH UNDERCUT CONDUCTIVE CIRCUIT ELEMENTS" (AMERICAN, DUTCH INVENTORS)
Vydavateľské údaje: Washington, D.C HT Digital Streams Limited 19.02.2019Vydané v US Fed News Service, Including US State News (19.02.2019)Získať plný text
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Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses
ISSN: 0018-9383, 1557-9646Vydavateľské údaje: New York, NY IEEE 01.07.2013Vydané v IEEE transactions on electron devices (01.07.2013)“… We demonstrate an original methodology to use conductive-bridge RAM (CBRAM) devices as, easy to program and low-power, binary synapses with stochastic learning rules…”
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Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing
ISSN: 0018-9383, 1557-9646Vydavateľské údaje: New York IEEE 01.04.2023Vydané v IEEE transactions on electron devices (01.04.2023)“…> 8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels…”
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3-D Stackable Offset-Via Antifuse by Cu BEOL Process in Advanced CMOS Technologies
ISSN: 0018-9383, 1557-9646Vydavateľské údaje: New York IEEE 01.12.2023Vydané v IEEE transactions on electron devices (01.12.2023)“…The previous work proposed a 1-transistor-2-bit (1T2B) offset via antifuse memory implemented by FinFET CMOS logic processes…”
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Multilevel Resistance Programming in Conductive Bridge Resistive Memory
ISBN: 9781339290324, 1339290324Vydavateľské údaje: ProQuest Dissertations & Theses 01.01.2015“…) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing…”
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Dissertation -
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Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks
ISSN: 0018-9383, 1557-9646Vydavateľské údaje: New York IEEE 01.03.2024Vydané v IEEE transactions on electron devices (01.03.2024)“… IMC accuracy, however, is affected by nonidealities, such as variability of the conductive weights or IR drop along wires due to parasitic resistances, whose impact steeply increases with the increase of array size…”
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All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device
ISSN: 2199-160X, 2199-160XVydavateľské údaje: 01.10.2022Vydané v Advanced electronic materials (01.10.2022)“… By electrically programming the initial magnetization states of the device with two opposite switching modes, four Boolean logic gates of AND, NAND, OR, and NOR…”
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A formal logic approach to firewall packet filtering analysis and generation
ISSN: 0269-2821, 1573-7462Vydavateľské údaje: Dordrecht Springer Netherlands 01.06.2008Vydané v The Artificial intelligence review (01.06.2008)“… This work shows that formal logic is an important tool in this respect, because it is particularly apt at modelling real-world situations and its formalism is conductive…”
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A conductive channel size comparison of silicon dielectric and amorphous silicon antifuses
ISBN: 0780309782, 9780780309784ISSN: 1524-766XVydavateľské údaje: IEEE 1993Vydané v 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers (1993)“… The relationship of a programmed 'ON' antifuse conductive channel size as a function of the programming current is established for both metal-metal amorphous silicon antifuses and poly-poly nitride/oxide antifuses…”
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Multi-Nozzle Pneumatic Extrusion-Based Additive Manufacturing System for Printing Sensing Pads
ISSN: 2411-5134, 2411-5134Vydavateľské údaje: Basel MDPI AG 01.09.2020Vydané v Inventions (Basel) (01.09.2020)“…) system and applied it to print multi-material polymers and conductive sensing pads. We used pneumatic extrusion nozzles to extrude the liquid material and then cured it by an ultraviolet (UV) light source…”
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A CBRAM-based compact interconnect switch for non-volatile reconfigurable logic circuits
ISBN: 9781467347402, 146734740XISSN: 2381-3555Vydavateľské údaje: IEEE 01.05.2013Vydané v Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) (01.05.2013)“…This paper presents a 2-to-2 interconnect switch based on Conductive Bridging Random Access Memories (CBRAMs…”
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CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications
ISSN: 2051-6355, 2051-6355Vydavateľské údaje: England 29.11.2021Vydané v Materials horizons (29.11.2021)“…In-memory logic calculations and brain-inspired artificial synaptic neuromorphic computing are expected to solve the limitations of the traditional von Neumann computing architecture…”
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Separability in the Ambient Logic
ISSN: 1860-5974, 1860-5974Vydavateľské údaje: Logical Methods in Computer Science e.V 04.09.2008Vydané v Logical methods in computer science (04.09.2008)“…The \it{Ambient Logic} (AL) has been proposed for expressing properties of process mobility in the calculus of Mobile Ambients (MA…”
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Two-dimensional reconfigurable electronics enabled by asymmetric floating gate
ISSN: 1998-0124, 1998-0000Vydavateľské údaje: Beijing Tsinghua University Press 01.05.2022Vydané v Nano research (01.05.2022)“…). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity…”
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Weak asymptotic solution of the phase field system in the case of confluence of free boundaries in the Stefan problem with undercooling
ISSN: 2331-8422Vydavateľské údaje: Ithaca Cornell University Library, arXiv.org 30.05.2006Vydané v arXiv.org (30.05.2006)“…We assume that the Stefan problem with undercooling has a classical solution until the moment of contact of free boundaries and the free boundaries have finite…”
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