Suchergebnisse - Simulation Program with Integrated Circuit Emphasis device model

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    On-chip tunable Memristor-based flash-ADC converter for artificial intelligence applications von Humood, Khaled, Mohammad, Baker, Abunahla, Heba, Azzam, Anas

    ISSN: 1751-858X, 1751-8598, 1751-8598
    Veröffentlicht: Stevenage The Institution of Engineering and Technology 01.01.2020
    Veröffentlicht in IET circuits, devices & systems (01.01.2020)
    “… This is achieved by utilising the highly analogue behaviour observed in multi-state MR devices fabricated and tested by the authors' group …”
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    Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model von Jin, J.W., Oudwan, M., Daineka, D., Moustapha, O., Bonnassieux, Y.

    ISSN: 1751-858X, 1751-8598
    Veröffentlicht: Stevenage John Wiley & Sons, Inc 01.03.2012
    Veröffentlicht in IET circuits, devices & systems (01.03.2012)
    “… The universal simulation program with integrated circuit emphasis (SPICE) model for hydrogenated amorphous silicon thin-film transistor is largely used in circuit simulation …”
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    Noise properties of contactless integrated photonic probes on silicon waveguides von Wang, Zhao, Zhang, Ziyu, Zou, Kai, Meng, Yun, Liu, Haiyi, Hu, Xiaolong

    ISSN: 1539-4522, 2155-3165, 1539-4522
    Veröffentlicht: United States 01.01.2023
    “… Finally, we establish a circuit model and use the Simulation Program with Integrated Circuit Emphasis to model and simulate the noise properties of these devices …”
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    XBarNet: Computationally Efficient Memristor Crossbar Model Using Convolutional Autoencoder von Zhang, Yuhang, He, Guanghui, Wang, Guoxing, Li, Yongfu

    ISSN: 0278-0070, 1937-4151
    Veröffentlicht: New York IEEE 01.12.2022
    “… The conventional device-level memristor model with a circuit simulator such as simulation program with integrated circuit emphasis (SPICE …”
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    Compact electrothermal model of laboratory made GaN Schottky diodes von Górecki, Krzysztof, Górecki, Paweł

    ISSN: 1356-5362, 1758-812X
    Veröffentlicht: Bradford Emerald Publishing Limited 21.05.2020
    Veröffentlicht in Microelectronics international (21.05.2020)
    “… Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis …”
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    A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling von Batas, D, Fiedler, H

    ISSN: 1536-125X, 1941-0085
    Veröffentlicht: New York, NY IEEE 01.03.2011
    Veröffentlicht in IEEE transactions on nanotechnology (01.03.2011)
    “… This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated circuits emphasis (SPICE …”
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    Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing von Bhattacharjee, Abhiroop, Nguyen, Thanh Chien, Pachauri, Vivek, Ingebrandt, Sven, Vu, Xuan Thang

    ISSN: 2072-666X, 2072-666X
    Veröffentlicht: Switzerland MDPI AG 31.12.2020
    Veröffentlicht in Micromachines (Basel) (31.12.2020)
    “… We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE …”
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    Neural Compact Modeling Framework for Flexible Model Parameter Selection with High Accuracy and Fast SPICE Simulation von Eom, Seungjoon, Yun, Hyeok, Jang, Hyundong, Cho, Kyeongrae, Lee, Seunghwan, Jeong, Jinsu, Baek, Rock‐Hyun

    ISSN: 2640-4567, 2640-4567
    Veröffentlicht: Weinheim John Wiley & Sons, Inc 01.04.2024
    Veröffentlicht in Advanced intelligent systems (01.04.2024)
    “… ‐device applications and reduces the quality of circuit simulations. To address these drawbacks, a neural compact modeling framework with a flexible selection of technology …”
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    Modeling Electrothermal Feedback of Superconducting Nanowire Single-Photon Detectors in SPICE von Nguyen, Hanson, Simon, Alejandro, Foster, Reed, Berggren, Karl K.

    ISSN: 1051-8223, 1558-2515
    Veröffentlicht: New York IEEE 01.12.2025
    Veröffentlicht in IEEE transactions on applied superconductivity (01.12.2025)
    “… Here, we build upon a growing architecture of simulation program with integrated circuit emphasis tools for superconducting nanowire devices by capturing complex residual heating effects in a compact …”
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    SPICE modeling of nonlinear memristive behavior von Vourkas, Ioannis, Batsos, Athanasios, Sirakoulis, Georgios Ch

    ISSN: 0098-9886, 1097-007X
    Veröffentlicht: Bognor Regis Wiley Subscription Services, Inc 01.05.2015
    “… Modeling of memristive devices is essential for circuit design, and a number of Simulation Program with Integrated Circuit Emphasis (SPICE …”
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    Multi-grayscale driving system for a passive-matrix alternating current electroluminescence display with low crosstalk by an asymmetric half-voltage driving strategy von Zhou, Tao, He, Junjie, Yang, Kainian, Shi, Jintao, Chen, Weichun, Zhang, Yue, Peng, Lisha, Zheng, Shaoyong, Chen, Peining, Deng, Shaozhi, Yang, Bo-Ru

    ISSN: 1539-4794, 1539-4794
    Veröffentlicht: United States 15.08.2025
    Veröffentlicht in Optics letters (15.08.2025)
    “… In this study, a circuit model of ACEL is proposed, which is used to simulate the optoelectronic characteristics of ACEL devices as well as the crosstalk of PMACEL by the Simulation Program …”
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    Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization von Devoge, Paul, Aziza, Hassen, Lorenzini, Philippe, Masson, Pascal, Malherbe, Alexandre, Julien, Franck, Marzaki, Abderrezak, Regnier, Arnaud, Niel, Stephan

    ISSN: 0038-1101, 1879-2405
    Veröffentlicht: Elsevier Ltd 01.03.2023
    Veröffentlicht in Solid-state electronics (01.03.2023)
    “… (Simulation Program with Integrated Circuit Emphasis) of the new device is developed to evaluate …”
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    Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node von Seon, Yoongeun, Chang, Jeesoo, Yoo, Changhyun, Jeon, Jongwook

    ISSN: 2079-9292, 2079-9292
    Veröffentlicht: Basel MDPI AG 15.01.2021
    Veröffentlicht in Electronics (Basel) (15.01.2021)
    “… A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in the form of a sheet …”
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    Development of Nonlinear Electromechanical Coupled Macro Model for Electrostatic MEMS Cantilever Beam von Singh, Akanksha D., Patrikar, Rajendra M.

    ISSN: 2169-3536, 2169-3536
    Veröffentlicht: Piscataway IEEE 2019
    Veröffentlicht in IEEE access (2019)
    “… These devices are usually interfaced with electronic circuits. It is important to build its macro model for rapid system design and simulation …”
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    Symbolic Regression Based on Kolmogorov–Arnold Networks for Gray-Box Simulation Program with Integrated Circuit Emphasis Model of Generic Transistors von Huang, Yiming, Li, Bin, Wu, Zhaohui, Liu, Wenchao

    ISSN: 2079-9292, 2079-9292
    Veröffentlicht: Basel MDPI AG 16.03.2025
    Veröffentlicht in Electronics (Basel) (16.03.2025)
    “… In this paper, a novel approach to symbolic regression using Kolmogorov–Arnold Networks (KAN) for developing gray-box Simulation Program with Integrated Circuit Emphasis models of generic transistors is proposed …”
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    Technology Computer-Aided Design-Based Simulation Program with Integrated Circuit Emphasis Model for Back-Channel-Etched Thin-Film Transistors with Floating Metal Components von Kim, Kihwan, Kim, Myungeon, Cho, Hyunguk, Cho, Youngmi, Kim, Yongjo, Choi, Byoungdeog

    ISSN: 1533-4899, 1533-4899
    Veröffentlicht: 01.11.2020
    Veröffentlicht in Journal of nanoscience and nanotechnology (01.11.2020)
    “… (Technology computer-aided design) simulations (Atlas 3D) to predict the characteristics of a-Si TFTs with various active layer thicknesses and numbers of floating metal components …”
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    (V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance von Biolek, Dalibor, Kolka, Zdenek, Biolkova, Viera, Biolek, Zdenek, Kvatinsky, Shahar

    ISSN: 2169-3536, 2169-3536
    Veröffentlicht: Piscataway IEEE 2021
    Veröffentlicht in IEEE access (2021)
    “… (Simulation Program with Integrated Circuit Emphasis) environment. The modeling starts from the recently introduced TEAM …”
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    First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs von Maeda, Noriyuki, Kaneko, Mitsuaki, Tanaka, Hajime, Kimoto, Tsunenobu

    ISSN: 2995-8423, 2995-8423
    Veröffentlicht: 01.06.2025
    Veröffentlicht in APL Electronic Devices (01.06.2025)
    “… ) applicable in a high-temperature range was constructed, and the validity of the model was evaluated in Simulation Program with Integrated Circuit Emphasis (SPICE) simulations …”
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    Simulation Program with Integrated Circuit Emphasis Compact Modeling of a Dual-Gate Positive-Feedback Field-Effect Transistor for Circuit Simulations von Kwon, Min-Woo, Park, Kyungchul, Baek, Myung-Hyun, Hwang, Sungmin, Jang, Tejin, Park, Byung-Gook

    ISSN: 1533-4880
    Veröffentlicht: United States 01.10.2019
    Veröffentlicht in Journal of nanoscience and nanotechnology (01.10.2019)
    “… ) for circuit simulations by fitting the model to measurement results. We fabricated a FBFET and investigated the DC and transient characteristics …”
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