Suchergebnisse - Simulation Program with Integrated Circuit Emphasis device model
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On-chip tunable Memristor-based flash-ADC converter for artificial intelligence applications
ISSN: 1751-858X, 1751-8598, 1751-8598Veröffentlicht: Stevenage The Institution of Engineering and Technology 01.01.2020Veröffentlicht in IET circuits, devices & systems (01.01.2020)“… This is achieved by utilising the highly analogue behaviour observed in multi-state MR devices fabricated and tested by the authors' group …”
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Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model : Thin-Film-Transistor Modeling for Circuit Simulation
ISSN: 1751-858XVeröffentlicht: Stevenage Institution of Engineering and Technology 2012Veröffentlicht in IET circuits, devices & systems (2012)Volltext
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Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model
ISSN: 1751-858X, 1751-8598Veröffentlicht: Stevenage John Wiley & Sons, Inc 01.03.2012Veröffentlicht in IET circuits, devices & systems (01.03.2012)“… The universal simulation program with integrated circuit emphasis (SPICE) model for hydrogenated amorphous silicon thin-film transistor is largely used in circuit simulation …”
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Noise properties of contactless integrated photonic probes on silicon waveguides
ISSN: 1539-4522, 2155-3165, 1539-4522Veröffentlicht: United States 01.01.2023Veröffentlicht in Applied optics. Optical technology and biomedical optics (01.01.2023)“… Finally, we establish a circuit model and use the Simulation Program with Integrated Circuit Emphasis to model and simulate the noise properties of these devices …”
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XBarNet: Computationally Efficient Memristor Crossbar Model Using Convolutional Autoencoder
ISSN: 0278-0070, 1937-4151Veröffentlicht: New York IEEE 01.12.2022Veröffentlicht in IEEE transactions on computer-aided design of integrated circuits and systems (01.12.2022)“… The conventional device-level memristor model with a circuit simulator such as simulation program with integrated circuit emphasis (SPICE …”
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Compact electrothermal model of laboratory made GaN Schottky diodes
ISSN: 1356-5362, 1758-812XVeröffentlicht: Bradford Emerald Publishing Limited 21.05.2020Veröffentlicht in Microelectronics international (21.05.2020)“… Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis …”
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A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling
ISSN: 1536-125X, 1941-0085Veröffentlicht: New York, NY IEEE 01.03.2011Veröffentlicht in IEEE transactions on nanotechnology (01.03.2011)“… This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated circuits emphasis (SPICE …”
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Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing
ISSN: 2072-666X, 2072-666XVeröffentlicht: Switzerland MDPI AG 31.12.2020Veröffentlicht in Micromachines (Basel) (31.12.2020)“… We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE …”
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Neural Compact Modeling Framework for Flexible Model Parameter Selection with High Accuracy and Fast SPICE Simulation
ISSN: 2640-4567, 2640-4567Veröffentlicht: Weinheim John Wiley & Sons, Inc 01.04.2024Veröffentlicht in Advanced intelligent systems (01.04.2024)“… ‐device applications and reduces the quality of circuit simulations. To address these drawbacks, a neural compact modeling framework with a flexible selection of technology …”
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Modeling Electrothermal Feedback of Superconducting Nanowire Single-Photon Detectors in SPICE
ISSN: 1051-8223, 1558-2515Veröffentlicht: New York IEEE 01.12.2025Veröffentlicht in IEEE transactions on applied superconductivity (01.12.2025)“… Here, we build upon a growing architecture of simulation program with integrated circuit emphasis tools for superconducting nanowire devices by capturing complex residual heating effects in a compact …”
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SPICE modeling of nonlinear memristive behavior
ISSN: 0098-9886, 1097-007XVeröffentlicht: Bognor Regis Wiley Subscription Services, Inc 01.05.2015Veröffentlicht in International journal of circuit theory and applications (01.05.2015)“… Modeling of memristive devices is essential for circuit design, and a number of Simulation Program with Integrated Circuit Emphasis (SPICE …”
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Multi-grayscale driving system for a passive-matrix alternating current electroluminescence display with low crosstalk by an asymmetric half-voltage driving strategy
ISSN: 1539-4794, 1539-4794Veröffentlicht: United States 15.08.2025Veröffentlicht in Optics letters (15.08.2025)“… In this study, a circuit model of ACEL is proposed, which is used to simulate the optoelectronic characteristics of ACEL devices as well as the crosstalk of PMACEL by the Simulation Program …”
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Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization
ISSN: 0038-1101, 1879-2405Veröffentlicht: Elsevier Ltd 01.03.2023Veröffentlicht in Solid-state electronics (01.03.2023)“… (Simulation Program with Integrated Circuit Emphasis) of the new device is developed to evaluate …”
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Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node
ISSN: 2079-9292, 2079-9292Veröffentlicht: Basel MDPI AG 15.01.2021Veröffentlicht in Electronics (Basel) (15.01.2021)“… A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in the form of a sheet …”
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Development of Nonlinear Electromechanical Coupled Macro Model for Electrostatic MEMS Cantilever Beam
ISSN: 2169-3536, 2169-3536Veröffentlicht: Piscataway IEEE 2019Veröffentlicht in IEEE access (2019)“… These devices are usually interfaced with electronic circuits. It is important to build its macro model for rapid system design and simulation …”
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Symbolic Regression Based on Kolmogorov–Arnold Networks for Gray-Box Simulation Program with Integrated Circuit Emphasis Model of Generic Transistors
ISSN: 2079-9292, 2079-9292Veröffentlicht: Basel MDPI AG 16.03.2025Veröffentlicht in Electronics (Basel) (16.03.2025)“… In this paper, a novel approach to symbolic regression using Kolmogorov–Arnold Networks (KAN) for developing gray-box Simulation Program with Integrated Circuit Emphasis models of generic transistors is proposed …”
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Technology Computer-Aided Design-Based Simulation Program with Integrated Circuit Emphasis Model for Back-Channel-Etched Thin-Film Transistors with Floating Metal Components
ISSN: 1533-4899, 1533-4899Veröffentlicht: 01.11.2020Veröffentlicht in Journal of nanoscience and nanotechnology (01.11.2020)“… (Technology computer-aided design) simulations (Atlas 3D) to predict the characteristics of a-Si TFTs with various active layer thicknesses and numbers of floating metal components …”
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(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance
ISSN: 2169-3536, 2169-3536Veröffentlicht: Piscataway IEEE 2021Veröffentlicht in IEEE access (2021)“… (Simulation Program with Integrated Circuit Emphasis) environment. The modeling starts from the recently introduced TEAM …”
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First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs
ISSN: 2995-8423, 2995-8423Veröffentlicht: 01.06.2025Veröffentlicht in APL Electronic Devices (01.06.2025)“… ) applicable in a high-temperature range was constructed, and the validity of the model was evaluated in Simulation Program with Integrated Circuit Emphasis (SPICE) simulations …”
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Simulation Program with Integrated Circuit Emphasis Compact Modeling of a Dual-Gate Positive-Feedback Field-Effect Transistor for Circuit Simulations
ISSN: 1533-4880Veröffentlicht: United States 01.10.2019Veröffentlicht in Journal of nanoscience and nanotechnology (01.10.2019)“… ) for circuit simulations by fitting the model to measurement results. We fabricated a FBFET and investigated the DC and transient characteristics …”
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