Suchergebnisse - Conductive Logic Programming

  1. 1

    A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays von Erfanijazi, Hamidreza, Camunas-Mesa, Luis A., Vianello, Elisa, Serrano-Gotarredona, Teresa, Linares-Barranco, Bernabe

    ISSN: 1549-7747, 1558-3791
    Veröffentlicht: New York IEEE 01.08.2024
    “… To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance …”
    Volltext
    Journal Article
  2. 2

    Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory von Celano, Umberto, Goux, Ludovic, Degraeve, Robin, Fantini, Andrea, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried

    ISSN: 1530-6984, 1530-6992
    Veröffentlicht: United States American Chemical Society 09.12.2015
    Veröffentlicht in Nano letters (09.12.2015)
    “… Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic …”
    Volltext
    Journal Article
  3. 3

    Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays von Perez, Eduardo, Mahadevaiah, Mamathamba Kalishettyhalli, Quesada, Emilio Perez-Bosch, Wenger, Christian

    ISSN: 0018-9383, 1557-9646
    Veröffentlicht: New York IEEE 01.06.2021
    Veröffentlicht in IEEE transactions on electron devices (01.06.2021)
    “… ) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO 2 -based RRAM arrays …”
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    Journal Article
  4. 4

    A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications von Palma, G., Vianello, E., Thomas, O., Oucheikh, H., Onkaraiah, S., Toffoli, A., Carabasse, C., Molas, G., De Salvo, B.

    ISSN: 1930-8876
    Veröffentlicht: IEEE 01.09.2013
    “… ) were electrically characterized in a range of logic compatible programming conditions. A resistance ratio (Roff/Ron …”
    Volltext
    Tagungsbericht
  5. 5

    Thermal performance of thin film heat gauges of gold, silver and nano-composite von Sarma, Shrutidhara, Goyal, Ankit, Gao, Liang, Niu, Xiaodong, Garg, Akhil, Meijuan, Xu, Sandoval, Jayne

    ISSN: 1359-4311, 1873-5606
    Veröffentlicht: Oxford Elsevier Ltd 25.01.2019
    Veröffentlicht in Applied thermal engineering (25.01.2019)
    “… •Advanced thin film heat transfer gauges are tested under impulsive heat loads.•Metal/CNT composite can be used as low cost and efficient thin film …”
    Volltext
    Journal Article
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  7. 7

    Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses von Suri, M., Querlioz, D., Bichler, O., Palma, G., Vianello, E., Vuillaume, D., Gamrat, C., DeSalvo, B.

    ISSN: 0018-9383, 1557-9646
    Veröffentlicht: New York, NY IEEE 01.07.2013
    Veröffentlicht in IEEE transactions on electron devices (01.07.2013)
    “… We demonstrate an original methodology to use conductive-bridge RAM (CBRAM) devices as, easy to program and low-power, binary synapses with stochastic learning rules …”
    Volltext
    Journal Article
  8. 8

    Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing von Quesada, Emilio Perez-Bosch, Mahadevaiah, Mamathamba Kalishettyhalli, Rizzi, Tommaso, Wen, Jianan, Ulbricht, Markus, Krstic, Milos, Wenger, Christian, Perez, Eduardo

    ISSN: 0018-9383, 1557-9646
    Veröffentlicht: New York IEEE 01.04.2023
    Veröffentlicht in IEEE transactions on electron devices (01.04.2023)
    “… > 8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels …”
    Volltext
    Journal Article
  9. 9

    3-D Stackable Offset-Via Antifuse by Cu BEOL Process in Advanced CMOS Technologies von Yeh, Li-Yu, Chang, Ya-Lin, Chih, Yue-Der, Chang, Jonathan, Lin, Chrong-Jung, King, Ya-Chin

    ISSN: 0018-9383, 1557-9646
    Veröffentlicht: New York IEEE 01.12.2023
    Veröffentlicht in IEEE transactions on electron devices (01.12.2023)
    “… The previous work proposed a 1-transistor-2-bit (1T2B) offset via antifuse memory implemented by FinFET CMOS logic processes …”
    Volltext
    Journal Article
  10. 10

    Multilevel Resistance Programming in Conductive Bridge Resistive Memory von Mahalanabis, Debayan

    ISBN: 9781339290324, 1339290324
    Veröffentlicht: ProQuest Dissertations & Theses 01.01.2015
    “… ) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing …”
    Volltext
    Dissertation
  11. 11

    Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks von Lepri, N., Glukhov, A., Mannocci, P., Porzani, M., Ielmini, D.

    ISSN: 0018-9383, 1557-9646
    Veröffentlicht: New York IEEE 01.03.2024
    Veröffentlicht in IEEE transactions on electron devices (01.03.2024)
    “… IMC accuracy, however, is affected by nonidealities, such as variability of the conductive weights or IR drop along wires due to parasitic resistances, whose impact steeply increases with the increase of array size …”
    Volltext
    Journal Article
  12. 12

    All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device von Wang, Weiyang, Sheng, Yu, Zheng, Yuanhui, Ji, Yang, Wang, Kaiyou

    ISSN: 2199-160X, 2199-160X
    Veröffentlicht: 01.10.2022
    Veröffentlicht in Advanced electronic materials (01.10.2022)
    “… By electrically programming the initial magnetization states of the device with two opposite switching modes, four Boolean logic gates of AND, NAND, OR, and NOR …”
    Volltext
    Journal Article
  13. 13

    A formal logic approach to firewall packet filtering analysis and generation von Govaerts, John, Bandara, Arosha, Curran, Kevin

    ISSN: 0269-2821, 1573-7462
    Veröffentlicht: Dordrecht Springer Netherlands 01.06.2008
    Veröffentlicht in The Artificial intelligence review (01.06.2008)
    “… This work shows that formal logic is an important tool in this respect, because it is particularly apt at modelling real-world situations and its formalism is conductive …”
    Volltext
    Journal Article
  14. 14

    A conductive channel size comparison of silicon dielectric and amorphous silicon antifuses von Chen, K.-L.

    ISBN: 0780309782, 9780780309784
    ISSN: 1524-766X
    Veröffentlicht: IEEE 1993
    “… The relationship of a programmed 'ON' antifuse conductive channel size as a function of the programming current is established for both metal-metal amorphous silicon antifuses and poly-poly nitride/oxide antifuses …”
    Volltext
    Tagungsbericht
  15. 15

    Multi-Nozzle Pneumatic Extrusion-Based Additive Manufacturing System for Printing Sensing Pads von Chen, Kai-Wei, Tsai, Ming-Jong, Lee, Heng-Sheng

    ISSN: 2411-5134, 2411-5134
    Veröffentlicht: Basel MDPI AG 01.09.2020
    Veröffentlicht in Inventions (Basel) (01.09.2020)
    “… ) system and applied it to print multi-material polymers and conductive sensing pads. We used pneumatic extrusion nozzles to extrude the liquid material and then cured it by an ultraviolet (UV) light source …”
    Volltext
    Journal Article
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    A CBRAM-based compact interconnect switch for non-volatile reconfigurable logic circuits von Onkaraiah, Santhosh, Belleville, Marc, Reyboz, Marina, Clermidy, Fabien, Vianello, Elisa, Portal, Jean-Michel, Muller, Christophe

    ISBN: 9781467347402, 146734740X
    ISSN: 2381-3555
    Veröffentlicht: IEEE 01.05.2013
    “… This paper presents a 2-to-2 interconnect switch based on Conductive Bridging Random Access Memories (CBRAMs …”
    Volltext
    Tagungsbericht
  17. 17

    CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications von He, Zhen-Yu, Wang, Tian-Yu, Meng, Jia-Lin, Zhu, Hao, Ji, Li, Sun, Qing-Qing, Chen, Lin, Zhang, David Wei

    ISSN: 2051-6355, 2051-6355
    Veröffentlicht: England 29.11.2021
    Veröffentlicht in Materials horizons (29.11.2021)
    “… In-memory logic calculations and brain-inspired artificial synaptic neuromorphic computing are expected to solve the limitations of the traditional von Neumann computing architecture …”
    Weitere Angaben
    Journal Article
  18. 18

    Separability in the Ambient Logic von Hirschkoff, Daniel, Lozes, Etienne, Sangiorgi, Davide

    ISSN: 1860-5974, 1860-5974
    Veröffentlicht: Logical Methods in Computer Science e.V 04.09.2008
    Veröffentlicht in Logical methods in computer science (04.09.2008)
    “… The \it{Ambient Logic} (AL) has been proposed for expressing properties of process mobility in the calculus of Mobile Ambients (MA …”
    Volltext
    Journal Article
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    Two-dimensional reconfigurable electronics enabled by asymmetric floating gate von Jin, Tengyu, Gao, Jing, Wang, Yanan, Zheng, Yue, Sun, Shuo, Liu, Lei, Lin, Ming, Chen, Wei

    ISSN: 1998-0124, 1998-0000
    Veröffentlicht: Beijing Tsinghua University Press 01.05.2022
    Veröffentlicht in Nano research (01.05.2022)
    “… ). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity …”
    Volltext
    Journal Article
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    Weak asymptotic solution of the phase field system in the case of confluence of free boundaries in the Stefan problem with undercooling von Danilov, V G

    ISSN: 2331-8422
    Veröffentlicht: Ithaca Cornell University Library, arXiv.org 30.05.2006
    Veröffentlicht in arXiv.org (30.05.2006)
    “… We assume that the Stefan problem with undercooling has a classical solution until the moment of contact of free boundaries and the free boundaries have finite …”
    Volltext
    Paper