Photoinduced defects in semiconductors /
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| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Cambridge :
University Press,
1996
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| Ausgabe: | 1st ed. |
| Schriftenreihe: | Studies in semiconductor physics and microelectronics engineering
Vol. 4 |
| Schlagworte: | |
| ISBN: | 0521461960 |
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| 100 | 1 | |a Redfield, David | |
| 242 | 1 | 0 | |a Svetlom indukované poškodenia polovodičov |
| 245 | 1 | 0 | |a Photoinduced defects in semiconductors / |c David Redfield, Richard H. Bube |
| 250 | |a 1st ed. | ||
| 260 | |a Cambridge : |b University Press, |c 1996 | ||
| 300 | |a X, 217 s. : |b grafy, lit., tab. ; | ||
| 490 | 0 | |a Studies in semiconductor physics and microelectronics engineering |v Vol. 4 | |
| 653 | 1 | |a fotochémia |a amorfný silikón | |
| 692 | |a GM ML PO MM | ||
| 700 | 1 | |a Bube, Richard H. | |
| 760 | 1 | |t Studies in semiconductor physics and microelectronics engineering |g Vol. 4 | |
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