The influence of process-induced defects on electrical properties of silicon junctions /
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Göteborg :
Chalmers Tekniska Högskola,
1992
|
| Edition: | 1st ed. |
| Series: | Technical report
No. 226 |
| Subjects: | |
| ISBN: | 9170326754 |
| Online Access: |
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MARC
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| 100 | 1 | |a Andersson, Gert Ingvar | |
| 242 | 1 | 0 | |a Účinok spracovaním vyvolaných defektov na elektrické vlastnosti kremíkových prechodov |
| 245 | 1 | 4 | |a The influence of process-induced defects on electrical properties of silicon junctions / |c Gert Ingvar Andersson |
| 250 | |a 1st ed. | ||
| 260 | |a Göteborg : |b Chalmers Tekniska Högskola, |c 1992 | ||
| 300 | |a Preruš. str. : |b grafy, lit., obr., tab. ; | ||
| 490 | 0 | |a Technical report |v No. 226 | |
| 653 | 1 | |a mikroelektronika |a spektroskopia |a vodivosť |a defekt kryštálový | |
| 692 | |a HA VD PR PO MM | ||
| 760 | 1 | |t Technical report | |
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