Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...
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| Médium: | Elektronický zdroj E-kniha |
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| Jazyk: | angličtina |
| Vydáno: |
Cham :
Springer International Publishing,
2018.
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| Vydání: | 1st ed. 2018. |
| Edice: | Integrated Circuits and Systems,
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| Témata: | |
| ISBN: | 9783319779942 |
| ISSN: | 1558-9412 |
| On-line přístup: |
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Obsah:
- Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics
- Chapter2: Lateral GaN HEMT structures
- Chapter3: Vertical GaN Transistors for Power Electronics
- Chapter4: Reliability of GaN-based Power devices
- Chapter5: Validating GaN robustness
- Chapter6: Impact of Parasitics on GaN Based Power Conversion
- Chapter7: GaN in AC/DC Power Converters
- Chapter8: GaN in Switched Mode Power Amplifiers.

