Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...

Celý popis

Uloženo v:
Podrobná bibliografie
Médium: Elektronický zdroj E-kniha
Jazyk:angličtina
Vydáno: Cham : Springer International Publishing, 2018.
Vydání:1st ed. 2018.
Edice:Integrated Circuits and Systems,
Témata:
ISBN:9783319779942
ISSN:1558-9412
On-line přístup: Získat plný text
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
Obsah:
  • Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics
  • Chapter2: Lateral GaN HEMT structures
  • Chapter3: Vertical GaN Transistors for Power Electronics
  • Chapter4: Reliability of GaN-based Power devices
  • Chapter5: Validating GaN robustness
  • Chapter6: Impact of Parasitics on GaN Based Power Conversion
  • Chapter7: GaN in AC/DC Power Converters
  • Chapter8: GaN in Switched Mode Power Amplifiers.