Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...
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| Médium: | Elektronický zdroj E-kniha |
|---|---|
| Jazyk: | angličtina |
| Vydáno: |
Cham :
Springer International Publishing,
2018.
|
| Vydání: | 1st ed. 2018. |
| Edice: | Integrated Circuits and Systems,
|
| Témata: | |
| ISBN: | 9783319779942 |
| ISSN: | 1558-9412 |
| On-line přístup: |
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| Tagy: |
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| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 003 | SK-BrCVT | ||
| 005 | 20220618120941.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 180512s2018 gw | s |||| 0|eng d | ||
| 020 | |a 9783319779942 | ||
| 024 | 7 | |a 10.1007/978-3-319-77994-2 |2 doi | |
| 035 | |a CVTIDW09596 | ||
| 040 | |a Springer-Nature |b eng |c CVTISR |e AACR2 | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion |h [electronic resource] / |c edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. |
| 250 | |a 1st ed. 2018. | ||
| 260 | 1 | |a Cham : |b Springer International Publishing, |c 2018. | |
| 300 | |a XIII, 232 p. 183 illus., 165 illus. in color. |b online resource. | ||
| 490 | 1 | |a Integrated Circuits and Systems, |x 1558-9412 | |
| 500 | |a Engineering | ||
| 505 | 0 | |a Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers. | |
| 516 | |a text file PDF | ||
| 520 | |a This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies. | ||
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Electronic materials. | |
| 856 | 4 | 0 | |u http://hanproxy.cvtisr.sk/han/cvti-ebook-springer-eisbn-978-3-319-77994-2 |y Vzdialený prístup pre registrovaných používateľov |
| 910 | |b ZE06876 | ||
| 919 | |a 978-3-319-77994-2 | ||
| 974 | |a andrea.lebedova |f Elektronické zdroje | ||
| 992 | |a SUD | ||
| 999 | |c 276007 |d 276007 | ||