Epitaxial Growth of III-Nitride Compounds Computational Approach /

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...

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Bibliographic Details
Format: Electronic eBook
Language:English
Published: Cham : Springer International Publishing, 2018.
Edition:1st ed. 2018.
Series:Springer Series in Materials Science, 269
Subjects:
ISBN:9783319766416
ISSN:0933-033X ;
Online Access: Get full text
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LEADER 00000nam a22000005i 4500
003 SK-BrCVT
005 20220618120755.0
007 cr nn 008mamaa
008 180417s2018 gw | s |||| 0|eng d
020 |a 9783319766416 
024 7 |a 10.1007/978-3-319-76641-6  |2 doi 
035 |a CVTIDW09005 
040 |a Springer-Nature  |b eng  |c CVTISR  |e AACR2 
041 |a eng 
245 1 0 |a Epitaxial Growth of III-Nitride Compounds  |h [electronic resource] :  |b Computational Approach /  |c edited by Takashi Matsuoka, Yoshihiro Kangawa. 
250 |a 1st ed. 2018. 
260 1 |a Cham :  |b Springer International Publishing,  |c 2018. 
300 |a IX, 223 p. 136 illus., 101 illus. in color.  |b online resource. 
490 1 |a Springer Series in Materials Science,  |x 0933-033X ;  |v 269 
500 |a Chemistry and Materials Science  
505 0 |a Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary. 
516 |a text file PDF 
520 |a This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 0 |a Semiconductors. 
650 0 |a Physics. 
650 0 |a Materials-Surfaces. 
650 0 |a Thin films. 
650 0 |a Crystallography. 
856 4 0 |u http://hanproxy.cvtisr.sk/han/cvti-ebook-springer-eisbn-978-3-319-76641-6  |y Vzdialený prístup pre registrovaných používateľov 
910 |b ZE06285 
919 |a 978-3-319-76641-6 
974 |a andrea.lebedova  |f Elektronické zdroje 
992 |a SUD 
999 |c 275675  |d 275675