Epitaxial Growth of III-Nitride Compounds Computational Approach /
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...
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| Format: | Electronic eBook |
|---|---|
| Language: | English |
| Published: |
Cham :
Springer International Publishing,
2018.
|
| Edition: | 1st ed. 2018. |
| Series: | Springer Series in Materials Science,
269 |
| Subjects: | |
| ISBN: | 9783319766416 |
| ISSN: | 0933-033X ; |
| Online Access: |
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| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 003 | SK-BrCVT | ||
| 005 | 20220618120755.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 180417s2018 gw | s |||| 0|eng d | ||
| 020 | |a 9783319766416 | ||
| 024 | 7 | |a 10.1007/978-3-319-76641-6 |2 doi | |
| 035 | |a CVTIDW09005 | ||
| 040 | |a Springer-Nature |b eng |c CVTISR |e AACR2 | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Epitaxial Growth of III-Nitride Compounds |h [electronic resource] : |b Computational Approach / |c edited by Takashi Matsuoka, Yoshihiro Kangawa. |
| 250 | |a 1st ed. 2018. | ||
| 260 | 1 | |a Cham : |b Springer International Publishing, |c 2018. | |
| 300 | |a IX, 223 p. 136 illus., 101 illus. in color. |b online resource. | ||
| 490 | 1 | |a Springer Series in Materials Science, |x 0933-033X ; |v 269 | |
| 500 | |a Chemistry and Materials Science | ||
| 505 | 0 | |a Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary. | |
| 516 | |a text file PDF | ||
| 520 | |a This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds. | ||
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Electronic materials. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Physics. | |
| 650 | 0 | |a Materials-Surfaces. | |
| 650 | 0 | |a Thin films. | |
| 650 | 0 | |a Crystallography. | |
| 856 | 4 | 0 | |u http://hanproxy.cvtisr.sk/han/cvti-ebook-springer-eisbn-978-3-319-76641-6 |y Vzdialený prístup pre registrovaných používateľov |
| 910 | |b ZE06285 | ||
| 919 | |a 978-3-319-76641-6 | ||
| 974 | |a andrea.lebedova |f Elektronické zdroje | ||
| 992 | |a SUD | ||
| 999 | |c 275675 |d 275675 | ||

