Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in...

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Hlavný autor: Fu, Mengqi (Autor)
Médium: Elektronický zdroj E-kniha
Jazyk:English
Vydavateľské údaje: Singapore : Springer Singapore , 2018.
Vydanie:1st ed. 2018.
Edícia:Springer Theses, Recognizing Outstanding Ph.D. Research,
Predmet:
Nanoscale science.
Nanoscience.
Nanostructures.
Nanotechnology.
Semiconductors.
Materials science.
Electronic circuits.
Optical materials.
Electronic materials.
ISBN:9789811334443
ISSN:2190-5053
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Obsah:
  • Introduction
  • Preparation, characterization and parameter extraction of InAs nanowire-based devices
  • Size effect on the electrical properties of InAs nanowires
  • Crystal phase- and orientation-dependent electrical properties of InAs nanowires
  • Influence of growth methods on the electrical properties of InAs nanowires
  • Summary.

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