Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors
This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the ther...
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| Hlavný autor: | |
|---|---|
| Médium: | Elektronický zdroj E-kniha |
| Jazyk: | English |
| Vydavateľské údaje: |
Singapore :
Springer Singapore ,
2018.
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| Vydanie: | 1st ed. 2018. |
| Edícia: | SpringerBriefs in Applied Sciences and Technology,
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| Predmet: | |
| ISBN: | 9789811325717 |
| ISSN: | 2191-530X |
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| 003 | SK-BrCVT | ||
| 005 | 20220618103156.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 181005s2018 si | s |||| 0|eng d | ||
| 020 | |a 9789811325717 | ||
| 024 | 7 | |a 10.1007/978-981-13-2571-7 |2 doi | |
| 035 | |a CVTIDW14735 | ||
| 040 | |a Springer-Nature |b eng |c CVTISR |e AACR2 | ||
| 041 | |a eng | ||
| 100 | 1 | |a Dinh, Toan. |4 aut | |
| 245 | 1 | 0 | |a Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors |h [electronic resource] / |c by Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao. |
| 250 | |a 1st ed. 2018. | ||
| 260 | 1 | |a Singapore : |b Springer Singapore , |c 2018. | |
| 300 | |a XI, 115 p. 66 illus., 60 illus. in color. |b online resource. | ||
| 490 | 1 | |a SpringerBriefs in Applied Sciences and Technology, |x 2191-530X | |
| 500 | |a Chemistry and Materials Science | ||
| 505 | 0 | |a Introduction to SiC and Thermoelectrical Properties -- Fundamentals of Thermoelectrical Effect in SiC -- Desirable Features for High Temperature SiC Sensors -- Fabrication of SiC MEMS Sensors -- Impact of Design and Process on Performance of SiC Thermal Devices -- Applications of Thermoelectrical Effect in SiC -- Future prospects of SiC Thermoelectrical Sensing Devices. | |
| 516 | |a text file PDF | ||
| 520 | |a This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects. | ||
| 650 | 0 | |a Nanotechnology. | |
| 650 | 0 | |a Solid state physics. | |
| 856 | 4 | 0 | |u http://hanproxy.cvtisr.sk/han/cvti-ebook-springer-eisbn-978-981-13-2571-7 |y Vzdialený prístup pre registrovaných používateľov |
| 910 | |b ZE12015 | ||
| 919 | |a 978-981-13-2571-7 | ||
| 974 | |a andrea.lebedova |f Elektronické zdroje | ||
| 992 | |a SUD | ||
| 999 | |c 244495 |d 244495 | ||