Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the ther...

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Hlavný autor: Dinh, Toan (Autor)
Médium: Elektronický zdroj E-kniha
Jazyk:English
Vydavateľské údaje: Singapore : Springer Singapore , 2018.
Vydanie:1st ed. 2018.
Edícia:SpringerBriefs in Applied Sciences and Technology,
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ISBN:9789811325717
ISSN:2191-530X
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Popis
Shrnutí:This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.
Popis jednotky:Chemistry and Materials Science
Fyzický popis:XI, 115 p. 66 illus., 60 illus. in color. online resource.
ISBN:9789811325717
ISSN:2191-530X