Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors From Materials to Devices /

This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses...

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Bibliographic Details
Main Author: Adhikary, Sourav (Author)
Format: Electronic eBook
Language:English
Published: Singapore : Springer Singapore , 2018.
Edition:1st ed. 2018.
Subjects:
Electronic circuits.
Lasers.
Photonics.
Signal processing.
Image processing.
Speech processing systems.
ISBN:9789811052903
Online Access: Get full text
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100 1 |a Adhikary, Sourav.  |4 aut 
245 1 0 |a Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors  |h [electronic resource] :  |b From Materials to Devices /  |c by Sourav Adhikary, Subhananda Chakrabarti. 
250 |a 1st ed. 2018. 
260 1 |a Singapore :  |b Springer Singapore ,  |c 2018. 
300 |a XIII, 63 p. 35 illus., 16 illus. in color.  |b online resource. 
500 |a Engineering  
505 0 |a Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work. 
516 |a text file PDF 
520 |a This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike. 
650 0 |a Electronic circuits. 
650 0 |a Lasers. 
650 0 |a Photonics. 
650 0 |a Signal processing. 
650 0 |a Image processing. 
650 0 |a Speech processing systems. 
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