Research on the Radiation Effects and Compact Model of SiGe HBT

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...

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Hlavní autor: Sun, Yabin (Autor)
Médium: Elektronický zdroj E-kniha
Jazyk:angličtina
Vydáno: Singapore : Springer Singapore , 2018.
Vydání:1st ed. 2018.
Edice:Springer Theses, Recognizing Outstanding Ph.D. Research,
Témata:
Electronics.
Microelectronics.
Semiconductors.
Optical materials.
Electronic materials.
Electronic circuits.
Solid state physics.
ISBN:9789811046124
ISSN:2190-5053
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Obsah:
  • Introduction
  • Ionization damage in SiGe HBT
  • Displacement damage with swift heavy ions in SiGe HBT
  • Single-event transient induced by pulse laser microbeam in SiGe HBT
  • Small-signal equivalent circuit of SiGe HBT based on the distributed effects
  • Parameter extraction of SiGe HBT models
  • Conclusion.

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