Research on the Radiation Effects and Compact Model of SiGe HBT
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...
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| Hlavní autor: | |
|---|---|
| Médium: | Elektronický zdroj E-kniha |
| Jazyk: | angličtina |
| Vydáno: |
Singapore :
Springer Singapore ,
2018.
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| Vydání: | 1st ed. 2018. |
| Edice: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Témata: | |
| ISBN: | 9789811046124 |
| ISSN: | 2190-5053 |
| On-line přístup: |
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| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 003 | SK-BrCVT | ||
| 005 | 20220618100822.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 171024s2018 si | s |||| 0|eng d | ||
| 020 | |a 9789811046124 | ||
| 024 | 7 | |a 10.1007/978-981-10-4612-4 |2 doi | |
| 035 | |a CVTIDW13595 | ||
| 040 | |a Springer-Nature |b eng |c CVTISR |e AACR2 | ||
| 041 | |a eng | ||
| 100 | 1 | |a Sun, Yabin. |4 aut | |
| 245 | 1 | 0 | |a Research on the Radiation Effects and Compact Model of SiGe HBT |h [electronic resource] / |c by Yabin Sun. |
| 250 | |a 1st ed. 2018. | ||
| 260 | 1 | |a Singapore : |b Springer Singapore , |c 2018. | |
| 300 | |a XXIV, 168 p. 171 illus. |b online resource. | ||
| 490 | 1 | |a Springer Theses, Recognizing Outstanding Ph.D. Research, |x 2190-5053 | |
| 500 | |a Engineering | ||
| 505 | 0 | |a Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion. | |
| 516 | |a text file PDF | ||
| 520 | |a This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. | ||
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Microelectronics. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Electronic materials. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Solid state physics. | |
| 856 | 4 | 0 | |u http://hanproxy.cvtisr.sk/han/cvti-ebook-springer-eisbn-978-981-10-4612-4 |y Vzdialený prístup pre registrovaných používateľov |
| 910 | |b ZE10875 | ||
| 919 | |a 978-981-10-4612-4 | ||
| 974 | |a andrea.lebedova |f Elektronické zdroje | ||
| 992 | |a SUD | ||
| 999 | |c 235764 |d 235764 | ||