Research on the Radiation Effects and Compact Model of SiGe HBT

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...

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Bibliographic Details
Main Author: Sun, Yabin (Author)
Format: Electronic eBook
Language:English
Published: Singapore : Springer Singapore , 2018.
Edition:1st ed. 2018.
Series:Springer Theses, Recognizing Outstanding Ph.D. Research,
Subjects:
Electronics.
Microelectronics.
Semiconductors.
Optical materials.
Electronic materials.
Electronic circuits.
Solid state physics.
ISBN:9789811046124
ISSN:2190-5053
Online Access: Get full text
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Summary:This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Item Description:Engineering
Physical Description:XXIV, 168 p. 171 illus. online resource.
ISBN:9789811046124
ISSN:2190-5053

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