Nanoelectronics : device physics, fabrication, simulation /
The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devic...
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| Hlavní autor: | |
|---|---|
| Médium: | E-kniha |
| Jazyk: | angličtina |
| Vydáno: |
München ; Wien :
De Gruyter Oldenbourg,
[2020]
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| Edice: | De Gruyter Textbook
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| Témata: | |
| ISBN: | 9783110575507 |
| On-line přístup: |
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| Tagy: |
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| 003 | SK-BrCVT | ||
| 005 | 20220617194215.0 | ||
| 006 | m|||||o||d|||||||| | ||
| 007 | cr || |||||||| | ||
| 008 | 210830t20202021gw fo d z eng d | ||
| 020 | |a 9783110575507 | ||
| 024 | 7 | |a 10.1515/9783110575507 |2 doi | |
| 035 | |a CVTIDW18692 | ||
| 040 | |a DeGruyter |b eng |c CVT |e AACR2 | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 072 | 7 | |a 621.3 |2 CVT | |
| 080 | |a 621.389 |2 2011 | ||
| 100 | 1 | |a Knoch, Joachim, |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Nanoelectronics : |b device physics, fabrication, simulation / |c Joachim Knoch. |
| 260 | |a München ; |a Wien : |b De Gruyter Oldenbourg, |c [2020] | ||
| 300 | |a 1 online resource (XVI, 390 p.) | ||
| 490 | 0 | |a De Gruyter Textbook | |
| 505 | 0 | 0 | |t Frontmatter -- |t Preface -- |t How to Use the Book -- |t Contents -- |t 1 Introduction -- |t 2 Solid-State Physics Foundation -- |t 3 Semiconductor Fabrication -- |t 4 Basic Ingredients for Nanoelectronics Devices -- |t 5 Metal-Oxide-Semiconductor Field-Effect Transistors -- |t 6 Device Simulation -- |t 7 Metal-Source-Drain Field-Effect Transistors -- |t 8 Carbon Nanotube Field-Effect Transistors -- |t 9 Steep Slope Transistors -- |t 10 Device Based on Two-Dimensional Materials -- |t A Color Map for 2D Materials -- |t Bibliography -- |t Index |
| 516 | |a text file PDF | ||
| 520 | |a The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well. | ||
| 538 | |a Mode of access: Internet via World Wide Web. | ||
| 546 | |a In English. | ||
| 650 | 7 | |a SCIENCE / Physics / Condensed Matter. | |
| 653 | |a nanoelektronické zariadenia | ||
| 655 | 4 | |a elektronické dokumenty | |
| 856 | 4 | 0 | |u http://hanproxy.cvtisr.sk/han/cvti-book-degruyteroldenbourg-eisbn-978-3-11-057550-7 |y Vzdialený prístup pre registrovaných používateľov |
| 910 | |b ZE13245 | ||
| 959 | |a 28 | ||
| 974 | |f Elektronické zdroje | ||
| 992 | |a SUD | ||
| 999 | |c 100810 |d 100810 | ||