Citace podle APA (7th ed.)

Ferrand-Drake Del Castillo, R., Chen, D., Chen, J. T., Thorsell, M., Darakchieva, V., & Rorsman, N. (2024). Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 71(6), 3596-3602. https://doi.org/10.1109/TED.2024.3392177

Citace podle Chicago (17th ed.)

Ferrand-Drake Del Castillo, Ragnar, Ding-Yuan Chen, J. T. Chen, Mattias Thorsell, Vanya Darakchieva, a Niklas Rorsman. "Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 71, no. 6 (2024): 3596-3602. https://doi.org/10.1109/TED.2024.3392177.

Citace podle MLA (9th ed.)

Ferrand-Drake Del Castillo, Ragnar, et al. "Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices, vol. 71, no. 6, 2024, pp. 3596-3602, https://doi.org/10.1109/TED.2024.3392177.

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