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Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

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Název: Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
Autoři: Li, Junjie, 1995, Bergsten, Johan, 1988, Pourkabirian, Arsalan, 1983, Grahn, Jan, 1962
Zdroj: IEEE Journal of the Electron Devices Society. 12:243-248
Témata: low-noise amplifier (LNA), HEMTs, Noise measurement, InP high-electronmobility transistor (HEMT), indium channel, Gain, Drain noise temperature, Indium phosphide, Logic gates, III-V semiconductor materials, Indium, qubit amplification
Popis: The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing. The performance of such LNAs is ultimately limited by the properties of the active InxGa1-xAs channel in the InP HEMT. In this study, we have investigated the noise performance of 100-nm gate-length InP HEMTs used in cryogenic LNAs for amplification of qubits. The channel indium content in the InP HEMTs was 53, 60 and 70%. Hall measurements of the epitaxial materials and dc characterization of the InP HEMTs confirmed the superior transport properties of the channel structures. An indirect method involving an LNA and small-signal noise modeling was used for extracting the channel noise with high accuracy. Under noise-optimized bias, we observed that the 60% indium channel InP HEMT exhibited the lowest drain noise temperature. The difference in LNA noise temperature among InP HEMTs became more pronounced with decreasing drain voltage and current. An average noise temperature and average gain of 3.3 K and 21 dB, respectively, for a 4-8 GHz three-stage hybrid cryogenic LNA using 60% indium channel InP HEMTs was measured at a dc power consumption of 108 μW. To the best of the authors’ knowledge, this is a new state-of-the-art for a C-band LNA operating below 1 mW. The higher drain noise temperature observed for 53 and 70% indium channels InP HEMTs can be attributed to a combination of thermal noise in the channel and real-space transfer of electrons from the channel to the barrier. This report gives experimental evidence of an optimum channel indium content in the InP HEMT used in LNAs for qubit amplification.
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Přístupová URL adresa: https://research.chalmers.se/publication/540756
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Li%2C+Junjie%22">Li, Junjie</searchLink>, 1995<br /><searchLink fieldCode="AR" term="%22Bergsten%2C+Johan%22">Bergsten, Johan</searchLink>, 1988<br /><searchLink fieldCode="AR" term="%22Pourkabirian%2C+Arsalan%22">Pourkabirian, Arsalan</searchLink>, 1983<br /><searchLink fieldCode="AR" term="%22Grahn%2C+Jan%22">Grahn, Jan</searchLink>, 1962
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <i>IEEE Journal of the Electron Devices Society</i>. 12:243-248
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22low-noise+amplifier+%28LNA%29%22">low-noise amplifier (LNA)</searchLink><br /><searchLink fieldCode="DE" term="%22HEMTs%22">HEMTs</searchLink><br /><searchLink fieldCode="DE" term="%22Noise+measurement%22">Noise measurement</searchLink><br /><searchLink fieldCode="DE" term="%22InP+high-electronmobility+transistor+%28HEMT%29%22">InP high-electronmobility transistor (HEMT)</searchLink><br /><searchLink fieldCode="DE" term="%22indium+channel%22">indium channel</searchLink><br /><searchLink fieldCode="DE" term="%22Gain%22">Gain</searchLink><br /><searchLink fieldCode="DE" term="%22Drain+noise+temperature%22">Drain noise temperature</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+phosphide%22">Indium phosphide</searchLink><br /><searchLink fieldCode="DE" term="%22Logic+gates%22">Logic gates</searchLink><br /><searchLink fieldCode="DE" term="%22III-V+semiconductor+materials%22">III-V semiconductor materials</searchLink><br /><searchLink fieldCode="DE" term="%22Indium%22">Indium</searchLink><br /><searchLink fieldCode="DE" term="%22qubit+amplification%22">qubit amplification</searchLink>
– Name: Abstract
  Label: Description
  Group: Ab
  Data: The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing. The performance of such LNAs is ultimately limited by the properties of the active InxGa1-xAs channel in the InP HEMT. In this study, we have investigated the noise performance of 100-nm gate-length InP HEMTs used in cryogenic LNAs for amplification of qubits. The channel indium content in the InP HEMTs was 53, 60 and 70%. Hall measurements of the epitaxial materials and dc characterization of the InP HEMTs confirmed the superior transport properties of the channel structures. An indirect method involving an LNA and small-signal noise modeling was used for extracting the channel noise with high accuracy. Under noise-optimized bias, we observed that the 60% indium channel InP HEMT exhibited the lowest drain noise temperature. The difference in LNA noise temperature among InP HEMTs became more pronounced with decreasing drain voltage and current. An average noise temperature and average gain of 3.3 K and 21 dB, respectively, for a 4-8 GHz three-stage hybrid cryogenic LNA using 60% indium channel InP HEMTs was measured at a dc power consumption of 108 μW. To the best of the authors’ knowledge, this is a new state-of-the-art for a C-band LNA operating below 1 mW. The higher drain noise temperature observed for 53 and 70% indium channels InP HEMTs can be attributed to a combination of thermal noise in the channel and real-space transfer of electrons from the channel to the barrier. This report gives experimental evidence of an optimum channel indium content in the InP HEMT used in LNAs for qubit amplification.
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  Data: electronic
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/JEDS.2024.3371905
    Languages:
      – Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 243
    Subjects:
      – SubjectFull: low-noise amplifier (LNA)
        Type: general
      – SubjectFull: HEMTs
        Type: general
      – SubjectFull: Noise measurement
        Type: general
      – SubjectFull: InP high-electronmobility transistor (HEMT)
        Type: general
      – SubjectFull: indium channel
        Type: general
      – SubjectFull: Gain
        Type: general
      – SubjectFull: Drain noise temperature
        Type: general
      – SubjectFull: Indium phosphide
        Type: general
      – SubjectFull: Logic gates
        Type: general
      – SubjectFull: III-V semiconductor materials
        Type: general
      – SubjectFull: Indium
        Type: general
      – SubjectFull: qubit amplification
        Type: general
    Titles:
      – TitleFull: Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
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          Name:
            NameFull: Li, Junjie
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            NameFull: Bergsten, Johan
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            NameFull: Pourkabirian, Arsalan
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            NameFull: Grahn, Jan
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          Dates:
            – D: 01
              M: 01
              Type: published
              Y: 2024
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            – Type: volume
              Value: 12
          Titles:
            – TitleFull: IEEE Journal of the Electron Devices Society
              Type: main
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